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NAND512W3A2BN6E集成电路(IC)的存储器规格书PDF中文资料

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厂商型号

NAND512W3A2BN6E

参数属性

NAND512W3A2BN6E 封装/外壳为48-TFSOP(0.724",18.40mm 宽);包装为托盘;类别为集成电路(IC)的存储器;产品描述:IC FLASH 512MBIT PARALLEL 48TSOP

功能描述

128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
IC FLASH 512MBIT PARALLEL 48TSOP

封装外壳

48-TFSOP(0.724",18.40mm 宽)

文件大小

916.59 Kbytes

页面数量

57

生产厂商

STMICROELECTRONICS

中文名称

意法半导体

网址

网址

数据手册

原厂下载下载地址一下载地址二到原厂下载

更新时间

2025-10-6 15:41:00

人工找货

NAND512W3A2BN6E价格和库存,欢迎联系客服免费人工找货

NAND512W3A2BN6E规格书详情

NAND512W3A2BN6E属于集成电路(IC)的存储器。由意法半导体集团制造生产的NAND512W3A2BN6E存储器存储器是集成电路上用作数据存储设备的半导体器件。这些器件分为非易失性或易失性两种,格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、闪存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。这些器件的存储容量为 64 b 至 6 Tb 不等,接口有 I2C、MMC、并行、eMMC、串行、单线、SPI、UFS、Xccela 总线和 1-线。

SUMMARY DESCRIPTION

The NAND Flash 528 Byte/ 264 Word Page is a family of non-volatile Flash memories that uses

the Single Level Cell (SLC) NAND cell technology. It is referred to as the Small Page family. The devices range from 128Mbits to 1Gbit and operate with either a 1.8V or 3V voltage supply. The size of a Page is either 528 Bytes (512 + 16 spare) or 264 Words (256 + 8 spare) depending on whether the device has a x8 or x16 bus width.

FEATURES SUMMARY

■ HIGH DENSITY NAND FLASH MEMORIES

– Up to 1 Gbit memory array

– Up to 32 Mbit spare area

– Cost effective solutions for mass storage applications

■ NAND INTERFACE

– x8 or x16 bus width

– Multiplexed Address/ Data

– Pinout compatibility for all densities

■ SUPPLY VOLTAGE

– 1.8V device: VDD = 1.7 to 1.95V

– 3.0V device: VDD = 2.7 to 3.6V

■ PAGE SIZE

– x8 device: (512 + 16 spare) Bytes

– x16 device: (256 + 8 spare) Words

■ BLOCK SIZE

– x8 device: (16K + 512 spare) Bytes

– x16 device: (8K + 256 spare) Words

■ PAGE READ / PROGRAM

– Random access: 12µs (max)

– Sequential access: 50ns (min)

– Page program time: 200µs (typ)

■ COPY BACK PROGRAM MODE

– Fast page copy without external buffering

■ FAST BLOCK ERASE

– Block erase time: 2ms (Typ)

■ STATUS REGISTER

■ ELECTRONIC SIGNATURE

■ CHIP ENABLE ‘DON’T CARE’ OPTION

– Simple interface with microcontroller

■ SERIAL NUMBER OPTION

■ HARDWARE DATA PROTECTION

– Program/Erase locked during Power transitions

■ DATA INTEGRITY

– 100,000 Program/Erase cycles

– 10 years Data Retention

■ RoHS COMPLIANCE

– Lead-Free Components are Compliant with the RoHS Directive

■ DEVELOPMENT TOOLS

– Error Correction Code software and hardware models

– Bad Blocks Management and Wear Leveling algorithms

– File System OS Native reference software

– Hardware simulation models

产品属性

更多
  • 产品编号:

    NAND512W3A2BN6E

  • 制造商:

    STMicroelectronics

  • 类别:

    集成电路(IC) > 存储器

  • 包装:

    托盘

  • 存储器类型:

    非易失

  • 存储器格式:

    闪存

  • 技术:

    闪存 - NAND

  • 存储容量:

    512Mb(64M x 8)

  • 存储器接口:

    并联

  • 写周期时间 - 字,页:

    50ns

  • 电压 - 供电:

    2.7V ~ 3.6V

  • 工作温度:

    -40°C ~ 85°C(TA)

  • 安装类型:

    表面贴装型

  • 封装/外壳:

    48-TFSOP(0.724",18.40mm 宽)

  • 供应商器件封装:

    48-TSOP

  • 描述:

    IC FLASH 512MBIT PARALLEL 48TSOP

供应商 型号 品牌 批号 封装 库存 备注 价格
ST/意法
2450+
TSOP
9850
只做原装正品现货或订货假一赔十!
询价
SST
原厂封装
9800
原装进口公司现货假一赔百
询价
ST
24+
TSOP
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
询价
STMicroelectronics
18+
ICFLASH512MBIT48TSOP
6580
公司原装现货
询价
ST/意法
23+
TSOP
9990
原装正品,支持实单
询价
ST
23+
TSOP48
8000
只做原装现货
询价
ST/意法
0551PB
TSSOP
2516
原装现货
询价
ST
21+
TSOP
1218
只做原装,绝对现货,原厂代理商渠道,欢迎电话微信查
询价
ST意法
25+
TSSOP48
25474
ST意法特价现货NAND512W3A2BN6E即刻询购立享优惠#长期有订
询价
ST
20+
TSSOP
2960
诚信交易大量库存现货
询价