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NAND512R3A集成电路(IC)的存储器规格书PDF中文资料

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厂商型号

NAND512R3A

参数属性

NAND512R3A 封装/外壳为63-VFBGA;包装为托盘;类别为集成电路(IC)的存储器;产品描述:IC FLSH 512MBIT PARALLEL 63VFBGA

功能描述

128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
IC FLSH 512MBIT PARALLEL 63VFBGA

封装外壳

63-VFBGA

文件大小

916.59 Kbytes

页面数量

57

生产厂商

STMICROELECTRONICS

中文名称

意法半导体

网址

网址

数据手册

原厂下载下载地址一下载地址二到原厂下载

更新时间

2025-11-21 22:58:00

人工找货

NAND512R3A价格和库存,欢迎联系客服免费人工找货

NAND512R3A规格书详情

NAND512R3A属于集成电路(IC)的存储器。由意法半导体集团制造生产的NAND512R3A存储器存储器是集成电路上用作数据存储设备的半导体器件。这些器件分为非易失性或易失性两种,格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、闪存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。这些器件的存储容量为 64 b 至 6 Tb 不等,接口有 I2C、MMC、并行、eMMC、串行、单线、SPI、UFS、Xccela 总线和 1-线。

SUMMARY DESCRIPTION

The NAND Flash 528 Byte/ 264 Word Page is a family of non-volatile Flash memories that uses

the Single Level Cell (SLC) NAND cell technology. It is referred to as the Small Page family. The devices range from 128Mbits to 1Gbit and operate with either a 1.8V or 3V voltage supply. The size of a Page is either 528 Bytes (512 + 16 spare) or 264 Words (256 + 8 spare) depending on whether the device has a x8 or x16 bus width.

FEATURES SUMMARY

■ HIGH DENSITY NAND FLASH MEMORIES

– Up to 1 Gbit memory array

– Up to 32 Mbit spare area

– Cost effective solutions for mass storage applications

■ NAND INTERFACE

– x8 or x16 bus width

– Multiplexed Address/ Data

– Pinout compatibility for all densities

■ SUPPLY VOLTAGE

– 1.8V device: VDD = 1.7 to 1.95V

– 3.0V device: VDD = 2.7 to 3.6V

■ PAGE SIZE

– x8 device: (512 + 16 spare) Bytes

– x16 device: (256 + 8 spare) Words

■ BLOCK SIZE

– x8 device: (16K + 512 spare) Bytes

– x16 device: (8K + 256 spare) Words

■ PAGE READ / PROGRAM

– Random access: 12µs (max)

– Sequential access: 50ns (min)

– Page program time: 200µs (typ)

■ COPY BACK PROGRAM MODE

– Fast page copy without external buffering

■ FAST BLOCK ERASE

– Block erase time: 2ms (Typ)

■ STATUS REGISTER

■ ELECTRONIC SIGNATURE

■ CHIP ENABLE ‘DON’T CARE’ OPTION

– Simple interface with microcontroller

■ SERIAL NUMBER OPTION

■ HARDWARE DATA PROTECTION

– Program/Erase locked during Power transitions

■ DATA INTEGRITY

– 100,000 Program/Erase cycles

– 10 years Data Retention

■ RoHS COMPLIANCE

– Lead-Free Components are Compliant with the RoHS Directive

■ DEVELOPMENT TOOLS

– Error Correction Code software and hardware models

– Bad Blocks Management and Wear Leveling algorithms

– File System OS Native reference software

– Hardware simulation models

产品属性

更多
  • 产品编号:

    NAND512R3A2BZA6E

  • 制造商:

    STMicroelectronics

  • 类别:

    集成电路(IC) > 存储器

  • 包装:

    托盘

  • 存储器类型:

    非易失

  • 存储器格式:

    闪存

  • 技术:

    闪存 - NAND

  • 存储容量:

    512Mb(64M x 8)

  • 存储器接口:

    并联

  • 写周期时间 - 字,页:

    60ns

  • 电压 - 供电:

    1.7V ~ 1.95V

  • 工作温度:

    -40°C ~ 85°C(TA)

  • 安装类型:

    表面贴装型

  • 封装/外壳:

    63-VFBGA

  • 供应商器件封装:

    63-VFBGA(8.5x15)

  • 描述:

    IC FLSH 512MBIT PARALLEL 63VFBGA

供应商 型号 品牌 批号 封装 库存 备注 价格
STM
2016+
BGA
9000
只做原装,假一罚十,公司可开17%增值税发票!
询价
MICRON
20+
BGA
19570
原装优势主营型号-可开原型号增税票
询价
ST
24+
BGA
20000
全新原厂原装,进口正品现货,正规渠道可含税!!
询价
MICRON
14+
BGA
2200
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
MICRON/镁光
25+
25000
原厂原包 深圳现货 主打品牌 假一赔百 可开票!
询价
micron(镁光)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
询价
MICRON/美光
24+
NA
20000
美光专营原装正品
询价
ST
23+
TSOP48
16900
正规渠道,只有原装!
询价
MICRON
BGA
9962
一级代理 原装正品假一罚十 价格优势 实单带接受价
询价
Numonyx/STMi
23+
63-VFBGA
65480
询价