512 Mbit, 1 Gbit, 2 Gbit, 4 Gbit, 8 Gbit 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory

FEATURES SUMMARY ■ HIGH DENSITY NAND FLASH MEMORIES – Up to 8 Gbit memory array – Up to 64Mbit spare area – Cost effective solutions for mass storage applications ■ NAND INTERFACE – x8 or x16 bus width – Multiplexed Address/ Data – Pinout compatibility for all densities ■ SUPPLY VOLTAG

文件：383.4 Kbytes 页数：59 Pages

STMICROELECTRONICS

意法半导体

1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory

文件：631.49 Kbytes 页数：64 Pages

STMICROELECTRONICS

意法半导体

1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory

文件：631.49 Kbytes 页数：64 Pages

STMICROELECTRONICS

意法半导体

1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory

文件：631.49 Kbytes 页数：64 Pages

STMICROELECTRONICS

意法半导体

1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory

文件：631.49 Kbytes 页数：64 Pages

STMICROELECTRONICS

意法半导体

1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory

文件：631.49 Kbytes 页数：64 Pages

STMICROELECTRONICS

意法半导体

1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory

文件：631.49 Kbytes 页数：64 Pages

STMICROELECTRONICS

意法半导体

1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory

文件：631.49 Kbytes 页数：64 Pages

STMICROELECTRONICS

意法半导体

1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory

文件：631.49 Kbytes 页数：64 Pages

STMICROELECTRONICS

意法半导体

1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory

文件：1.34162 Mbytes 页数：60 Pages

NUMONYX