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首页>NAND02GW3B2DZA6E>芯片详情
NAND02GW3B2DZA6E_STM/信盛_IC FLASH 2GBIT 63VFBGA纳艾斯
- 详细信息
- 规格书下载
产品属性
- 类型
描述
- 型号:
NAND02GW3B2DZA6E
- 功能描述:
IC FLASH 2GBIT 63VFBGA
- RoHS:
是
- 类别:
集成电路(IC) >> 存储器
- 系列:
-
- 产品变化通告:
Product Discontinuation 26/Apr/2010
- 标准包装:
136
- 系列:
- 格式 -
- 存储器:
RAM
- 存储器类型:
SRAM - 同步,DDR II
- 存储容量:
18M(1M x 18)
- 速度:
200MHz
- 接口:
并联
- 电源电压:
1.7 V ~ 1.9 V
- 工作温度:
0°C ~ 70°C
- 封装/外壳:
165-TBGA
- 供应商设备封装:
165-CABGA(13x15)
- 包装:
托盘
- 其它名称:
71P71804S200BQ
供应商
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