32Mb Ultra-Low Power Asynchronous CMOS Pseudo SRAM

Overview The N32T1630C1C is an integrated memory device containing a 32 Mbit SRAM built using a self-refresh DRAM array organized as 2,097,152 words by 16 bits. The device is designed and fabricated using NanoAmp’s advanced CMOS technology to provide both high-speed performance and ultra-low powe

文件：334.71 Kbytes 页数：15 Pages

NANOAMP

32Mb Ultra-Low Power Asynchronous CMOS Pseudo SRAM

Overview The N32T1630C1C is an integrated memory device containing a 32 Mbit SRAM built using a self-refresh DRAM array organized as 2,097,152 words by 16 bits. The device is designed and fabricated using NanoAmp’s advanced CMOS technology to provide both high-speed performance and ultra-low powe

文件：334.71 Kbytes 页数：15 Pages

NANOAMP

32Mb Ultra-Low Power Asynchronous CMOS Pseudo SRAM

Overview The N32T1630C1C is an integrated memory device containing a 32 Mbit SRAM built using a self-refresh DRAM array organized as 2,097,152 words by 16 bits. The device is designed and fabricated using NanoAmp’s advanced CMOS technology to provide both high-speed performance and ultra-low powe

文件：334.71 Kbytes 页数：15 Pages

NANOAMP

32Mb Ultra-Low Power Asynchronous CMOS Pseudo SRAM

ONSEMI

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