N32T1630C1C中文资料NANOAMP数据手册PDF规格书

Overview

The N32T1630C1C is an integrated memory device containing a 32 Mbit SRAM built using a self-refresh DRAM array organized as 2,097,152 words by 16 bits. The device is designed and fabricated using NanoAmp’s advanced CMOS technology to provide both high-speed performance and ultra-low power. It is designed to be identical in operation and interface to standard 6T SRAMS.

特性 Features

• Dual voltage for Optimum Performance:

VccQ - 2.7 to 3.6 Volts

Vcc - 2.7 to 3.6 Volts (Vcc ≤ VccQ)

• Fast random access time

70ns at 2.7V

• Very fast page mode access time

25ns page cycle and access

• Very low standby current

80µA V (Typical)

• Very low operating current

1.0mA at 1µs (Typical)

• Simple memory control

Byte control for independent byte operation

Output Enable (OE) for memory expansion

• Automatic power down to standby mode

• PAR and RMS power saving modes

• Deep sleep option

• TTL compatible three-state output driver