N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs

General Description This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequen

文件：122.52 Kbytes 页数：10 Pages

Fairchild

仙童半导体

N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs

General Description This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequen

文件：253.25 Kbytes 页数：11 Pages

Fairchild

仙童半导体

N-Channel Logic Level PWM Optimized UltraFET® Trench Power MOSFETs

General Description\nThis device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance.\nOptimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequenci • Fast switching\n• rDS(ON) = 0.0019Ω (Typ), VGS = 10V\n• rDS(ON) = 0.0027Ω (Typ), VGS = 4.5V\n• Qg (Typ) = 110nC, VGS = 5V\n• Qgd (Typ) = 31nC\n• CISS (Typ) = 11000pFApplications\n• DC/DC converters;

ONSEMI

安森美半导体

N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs

ONSEMI

安森美半导体