N25S830HA中文资料串行 SRAM 内存，256-kb，3.0 V数据手册ONSEMI规格书

描述 Description

The ON Semiconductor serial SRAM family includes several integrated memory devices including this 256 kb serially accessed Static Random Access Memory, internally organized as 32 k words by 8 bits. The devices are designed and fabricated using advanced CMOS technology to provide both high-speed performance and low power. The devices operate with a single chip select (CS) input and use a simple Serial Peripheral Interface (SPI) serial bus. A single data in and data out line is used along with a clock to access data within the devices. The N25S830HA devices include a HOLD pin that allows communication to the device to be paused. While paused, input transitions will be ignored. The devices can operate over a wide temperature range of -40°C to +85°C and can be available in several standard package offerings.

特性 Features

• 2.7 to 3.6 V power supply range
• Very low standby current - typical Isb as low as 1 uA
• Very low operating current - as low as 3 mA
• Simple memory control: single chip select (CS), serial input (SI) and serial output (SO)
• Flexible operating modes: word read and write, page mode (32 word page), and burst mode (full array)
• 32 K x 8 bit organization
• Self timed write cycles
• Built-in write protection (CS high)
• HOLD pin for pausing communication

简介

N25S830HA属于集成电路（IC）的存储器。由制造生产的N25S830HA存储器存储器是集成电路上用作数据存储设备的半导体器件。这些器件分为非易失性或易失性两种，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、闪存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。这些器件的存储容量为 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、单线、SPI、UFS、Xccela 总线和 1-线。