丝印：N24；Package：SOT523；NPN PRE-BIASED TRANSISTOR IN SOT523

Features • Epitaxial Planar Die Construction • Complementary PNP Types Available (DDTA) • Built-In Biasing Resistors, R1 = R2 • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • For automotive applications requiring specific change

文件：551.24 Kbytes 页数：10 Pages

DIODES

美台半导体

丝印：N24；DIGITAL TRANSISTOR

Features 1) Built-In Biasing Resistors, R1 = R2 = 10kΩ 2) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see inner circuit) . 3) Only the on/off conditions need to be set for operation, making the circuit design e

文件：704.49 Kbytes 页数：9 Pages

ROHM

罗姆

丝印：N24；Package：SOT-23；Transient Voltage Suppressors for ESD Protection

Feature 168~350 Watts Peak Pulse Power per Line (tp=8/20μs) Protects two unidirectional I/O lines Protects one bidirectional I/O line Working voltage:3.3~24V Low clamping voltage Low leakage current IEC61000-4-4 (EFT) 40A (5/50ηs) IEC61000-4-2(ESD) ±25kV (air), ±20kV (contact) :3.3V~8V IE

文件：2.49906 Mbytes 页数：4 Pages

UNSEMI

优恩半导体

丝印：N24；Package：SOT-23；Transient Voltage Suppressors for ESD Protection

Feature Moisture Sensitivity Level (MSL -1) AEC-Q101 qualified 168~350 Watts Peak Pulse Power per Line (tp=8/20μs) Protects two unidirectional I/O lines Protects one bidirectional I/O line Low clamping voltage Working Voltages: 3.3V~ 24V Low leakage current IEC61000-4-4 (EFT): 40A (5/50ηs

文件：2.49989 Mbytes 页数：4 Pages

UNSEMI

优恩半导体

丝印：N24；Package：SOT-23；ULTRA LOW CAPACITANCE TVS DIODE ARRAY

文件：133.08 Kbytes 页数：3 Pages

FS

8 Kb I2C CMOS Serial EEPROM with 1.2 V I/Os

Description The N24C008 is an 8 Kb Serial CMOS EEPROM, internally organized as 1,024 words of 8 bits each. These devices feature a 16−byte page write buffer and support both the Standard (100 kHz), Fast (400 kHz) and Fast−Plus (1 MHz) I2C protocol. The devices also feature a 128−bit factory−s

文件：234.67 Kbytes 页数：11 Pages

ONSEMI

安森美半导体

8 Kb I2C CMOS Serial EEPROM with 1.2 V I/Os

Description The N24C008 is an 8 Kb Serial CMOS EEPROM, internally organized as 1,024 words of 8 bits each. These devices feature a 16−byte page write buffer and support both the Standard (100 kHz), Fast (400 kHz) and Fast−Plus (1 MHz) I2C protocol. The devices also feature a 128−bit factory−s

文件：234.67 Kbytes 页数：11 Pages

ONSEMI

安森美半导体

256 Kb I2C CMOS Serial EEPROM in WLCSP Package

Description The N24C256 is a 256 Kb Serial CMOS EEPROM, internally organized as 32768 words of 8 bits each. They feature a 64-byte page write buffer and support both the Standard (100 kHz), Fast (400 kHz) and Fast-Plus (1 MHz) I2C protocol. The Write Protect input allows hardware protection

文件：204.31 Kbytes 页数：10 Pages

ONSEMI

安森美半导体

256 Kb I2C CMOS Serial EEPROM in WLCSP Package

Description The N24C256 is a 256 Kb Serial CMOS EEPROM, internally organized as 32768 words of 8 bits each. They feature a 64-byte page write buffer and support both the Standard (100 kHz), Fast (400 kHz) and Fast-Plus (1 MHz) I2C protocol. The Write Protect input allows hardware protection

文件：204.31 Kbytes 页数：10 Pages

ONSEMI

安森美半导体

256 Kb I2C CMOS Serial EEPROM with Software Write Protect

Description The N24C256X is a 256 Kb Serial CMOS EEPROM, internally organized as 32,768 words of 8 bits each. It features a 64−byte page write buffer and supports the Standard (100 kHz), Fast (400 kHz) and Fast−Plus (1 MHz) I2C protocol. The device also features a 128−bit factory−set read−onl

文件：144.37 Kbytes 页数：11 Pages

ONSEMI

安森美半导体