N-channel 200 V, 1.2 Ω, 1 A, SOT-223 MESH OVERLAY™ Power MOSFET

Description This device is an N-channel Power MOSFET developed using the latest high voltage MESH OVERLAY™ process. The new patented STrip layout coupled with the company’s proprietary edge termination structure, makes it suitable in converters for lighting applications. Features ■ 100 a

文件：515.2 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

丝印：N1N20；Package：SOT-223；N-channel 200 V, 1.2 Ω, 1 A, SOT-223 MESH OVERLAY™ Power MOSFET

Description This device is an N-channel Power MOSFET developed using the latest high voltage MESH OVERLAY™ process. The new patented STrip layout coupled with the company’s proprietary edge termination structure, makes it suitable in converters for lighting applications. Features ■ 100 a

文件：515.2 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

Autoranging Rectifier Modules Up to 1500 Watts

文件：676.27 Kbytes 页数：11 Pages

VICOR

Autoranging Rectifier Modules Up to 1500 Watts

文件：676.27 Kbytes 页数：11 Pages

VICOR

Autoranging Rectifier Modules Up to 1500 Watts

文件：676.27 Kbytes 页数：11 Pages

VICOR