| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS | ADPOW Advanced Power Technology | ADPOW | ||
N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS POWERMOSIV®SINGLEDIEISOTOP®PACKAGE | ADPOW Advanced Power Technology | ADPOW | ||
N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS POWERMOSIV®SINGLEDIEISOTOP®PACKAGE | ADPOW Advanced Power Technology | ADPOW | ||
CircuitModelsforPlasticPackagedMicrowaveDiodes Introduction Discrete,low-cost,surfacemountsemiconductordiodesareattractivechoicesforUHFandmicrowaveapplicationswherepackageparasiticmayhaveasignificantimpactonperformance.ThemostcommonpackagestylesaretheSOT-23andtheSOD-323(Figure1)whichwereneitherdesigne | SKYWORKSSkyworks Solutions Inc. 思佳讯美国思佳讯公司 | SKYWORKS | ||
PowerMOSVIisanewgenerationoflowgatecharge,highvoltageN-ChannelenhancementmodepowerMOSFETs PowerMOSVI™isanewgenerationoflowgatecharge,highvoltageN-ChannelenhancementmodepowerMOSFETs.LowergatechargeisachievedbyoptimizingthemanufacturingprocesstominimizeCissandCrss.LowergatechargecoupledwithPowerMOSVITMoptimizedgatelayout,deliversexceptionally | ADPOW Advanced Power Technology | ADPOW | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=9.5A@TC=25℃ ·DrainSourceVoltage :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.0Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
PowerMOSVIisanewgenerationoflowgatecharge,highvoltageN-ChannelenhancementmodepowerMOSFETs PowerMOSVI™isanewgenerationoflowgatecharge,highvoltageN-ChannelenhancementmodepowerMOSFETs.LowergatechargeisachievedbyoptimizingthemanufacturingprocesstominimizeCissandCrss.LowergatechargecoupledwithPowerMOSVITMoptimizedgatelayout,deliversexceptionally | ADPOW Advanced Power Technology | ADPOW | ||
N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS POWERMOSIV® N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS | ADPOW Advanced Power Technology | ADPOW | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=11A@TC=25℃ ·DrainSourceVoltage :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=11A@TC=25℃ ·DrainSourceVoltage- :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.0Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=11A@TC=25℃ ·DrainSourceVoltage- :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.0Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
POWERMOSVFREDFET PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. •AvalancheEner | ADPOW Advanced Power Technology | ADPOW | ||
PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs. PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. •FasterSwitching | ADPOW Advanced Power Technology | ADPOW | ||
PowerMOSVIisanewgenerationoflowgatecharge,highvoltageN-ChannelenhancementmodepowerMOSFETs PowerMOSVI™isanewgenerationoflowgatecharge,highvoltageN-ChannelenhancementmodepowerMOSFETs.LowergatechargeisachievedbyoptimizingthemanufacturingprocesstominimizeCissandCrss.LowergatechargecoupledwithPowerMOSVITMoptimizedgatelayout,deliversexceptionally | ADPOW Advanced Power Technology | ADPOW | ||
POWERMOSVFREDFET PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. •AvalancheEner | ADPOW Advanced Power Technology | ADPOW | ||
PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs. PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. •FasterSwitching | ADPOW Advanced Power Technology | ADPOW | ||
100AvalancheTested PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. •FasterSwitching | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
100AvalancheTested PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. •FasterSwitching | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
GIGABITRJ45LANMAGNETIC | ABRACONAbracon Corporation 阿布雷肯 | ABRACON | ||
10mmwideIP67&IP68LEDlightstrip | OPTOSUPPLYOptoSupply International 光谷 | OPTOSUPPLY |
详细参数
- 型号：
N1001HDM
- 制造商：
ASJ COMP
- 功能描述：
ER100-050M85-5X11
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
12+ |
TO-263 |
15000 |
全新原装,绝对正品,公司现货供应。 |
询价 | |||
NULL |
23+ |
TO-263 |
6000 |
专业优势供应 |
询价 | ||
23+ |
N/A |
36000 |
正品授权货源可靠 |
询价 | |||
SOT263 |
19200 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | ||||
22+ |
SOT263 |
100000 |
代理渠道/只做原装/可含税 |
询价 | |||
HH SMITH |
300 |
公司优势库存 热卖中! |
询价 | ||||
jean muller/熔断器 |
2022+ |
熔断器Fuse |
1750 |
长期供应,价格优势,全新原装,支持实单, |
询价 | ||
TE/泰科 |
2308+ |
484664 |
一级代理,原装正品! |
询价 | |||
22+ |
SOT263 |
20000 |
保证原装正品,假一陪十 |
询价 | |||
SAMSUNG |
22+ |
QFP |
500 |
样品可出,优势库存欢迎实单 |
询价 |
相关规格书
更多- N-1002
- N100X075C1C
- N100X075C2C
- N100X075CBC
- N100X075CBT
- N100X125C1C
- N101
- N101.250 PRA2ABS100-
- N101.500 PRA2ABS100-
- N-1010-15
- N-1010-9
- N10140
- N10191
- N101BS0D3A
- N101CS1C3A
- N101ES3K3A
- N101-SC-25
- N102
- N10214-5212PC
- N10214-52B2 PC
- N10214-52B2VC
- N10214-52G3PC
- N10214-6202PC
- N10220-6202PC
- N102207
- N10226-5212VC
- N10226-5213PC
- N10226-52B2JL
- N10226-52B2VC
- N10226-52B3VC
- N10226-52G3VC
- N10226-6212VC
- N10236-5202PC
- N10236-5212PC
- N10236-5213PC
- N10236-52A2PC
- N10240-5212PC
- N10240-52B2PC
- N10240-52B3PC
- N10240-52G3PC
- N10240-6202PC
- N10250-5212PC
- N10250-5242PC
- N10250-5243PC
- N10250-52A2PC
相关库存
更多- N10020
- N100X075C1T
- N100X075C2T
- N100X075CBD
- N100X075FJJ
- N100X125C1T
- N101.000 PRSTABZ100-
- N101.250 PRSTABZ100-
- N101.500 PRSTABZ100-
- N-1010-7
- N10124N
- N10190
- N10192
- N101CS1A3A
- N101CS1D3A
- N-101SC
- N101SC-3
- N102145212PC
- N10214-5212VC
- N10214-52B2PC
- N10214-52B3PC
- N10214-52G3VC
- N10214-6212PC
- N10220-6212PC
- N10226-5212PC
- N10226-5213 PC
- N10226-5213VC
- N10226-52B2PC
- N10226-52B3PC
- N10226-52G3PC
- N10226-6212PC
- N1022A
- N10236-5202VC
- N10236-5212VC
- N10236-5263VC
- N10236-6212PC
- N10240-5212VC
- N10240-52B2VC
- N10240-52B3VC
- N10240-52G3VC
- N10240-6212PC
- N10250-5212VC
- N10250-5242VC
- N10250-524BPC
- N10250-52A2VC
