N08L163WC2CZ1中文资料NANOAMP数据手册PDF规格书

Overview

The N08L163WC2C is an integrated memory device containing a 8 Mbit Static Random Access Memory organized as 524,288 words by 16 bits. The device is designed and fabricated using NanoAmp’s advanced CMOS technology to provide both high-speed performance and ultra-low power.

Features

• Single Wide Power Supply Range

2.2 to 3.6 Volts

• Very low standby current

2.0µA at 3.0V (Typical)

• Very low operating current

1.5mA at 3.0V and 1µs(Typical)

• Simple memory control

Dual Chip Enables (CE1 and CE2)

Byte control for independent byte operation

Output Enable (OE) for memory expansion

• Low voltage data retention

Vcc = 1.5V

• Very fast output enable access time

25ns OE access time

• Automatic power down to standby mode

• TTL compatible three-state output driver

• Ultra Low Power Sort Available