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零件编号	下载订购	功能描述/丝印	制造商上传企业	LOGO
N0300P-T1B-AT	文件：484.32 Kbytes Page：9 Pages	P-Channel30V(D-S)MOSFET FEATURES •TrenchFET®PowerMOSFET •100RgTested APPLICATIONS •ForMobileComputing -LoadSwitch -NotebookAdaptorSwitch -DC/DCConverter	VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司	VBSEMI
N0300P-T1B-AT	文件：262.7 Kbytes Page：8 Pages	MOSFIELDEFFECTTRANSISTOR P-CHANNELMOSFIELDEFFECTTRANSISTORFORSWITCHING DESCRIPTION TheN0300Pisaswitchingdevicewhichcanbedrivendirectlyby a4.5Vpowersource. Thedevicefeaturesalowon-stateresistanceandexcellent switchingcharacteristics,andissuitableforapplicationssuchas powerswitc	RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司	RENESAS

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N0300P-T1B-AT

文件：484.32 Kbytes

Page：9 Pages

P-Channel30V(D-S)MOSFET

FEATURES •TrenchFET®PowerMOSFET •100RgTested APPLICATIONS •ForMobileComputing -LoadSwitch -NotebookAdaptorSwitch -DC/DCConverter

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体（台湾）有限公司

VBSEMI

N0300P-T1B-AT

文件：262.7 Kbytes

Page：8 Pages

MOSFIELDEFFECTTRANSISTOR

P-CHANNELMOSFIELDEFFECTTRANSISTORFORSWITCHING DESCRIPTION TheN0300Pisaswitchingdevicewhichcanbedrivendirectlyby a4.5Vpowersource. Thedevicefeaturesalowon-stateresistanceandexcellent switchingcharacteristics,andissuitableforapplicationssuchas powerswitc

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

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