NPN SILICON EPITAXIAL TRANSISTOR

FEATURES ● Complements to N0201R. ● VCEO = 30 V ● IC(DC) = 1.0 A ● Miniature package SOT-23F (2SD999: Package variation of 3pPoMM)

文件：103.87 Kbytes 页数：5 Pages

RENESAS

瑞萨

PNP SILICON EPITAXIAL TRANSISTOR

FEATURES ● Complements to N0202S. ● VCEO = -20 V ● IC(DC) = -2.0 A ● Miniature package SOT-23F (2SB1114: Package variation of 3pPoMM)

文件：104.47 Kbytes 页数：5 Pages

RENESAS

瑞萨

PNP SILICON EPITAXIAL TRANSISTOR

FEATURES ● Complements to N0202S. ● VCEO = -20 V ● IC(DC) = -2.0 A ● Miniature package SOT-23F (2SB1114: Package variation of 3pPoMM)

文件：104.47 Kbytes 页数：5 Pages

RENESAS

瑞萨

Very high voltage NPN power transistor

Description The device is an NPN power bipolar transistor manufactured using the latest high-voltage diffused collector technology. Features ■ High gain ■ Very high voltage capability Applications ■ Haptic ■ High voltage solenoid driving

文件：133 Kbytes 页数：7 Pages

STMICROELECTRONICS

意法半导体

2Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 256Kx8 bit

Overview The N02M083WL1A is an integrated memory device intended for non life-support (Class 1 or 2) medical applications. This device comprises a 2 Mbit Static Random Access Memory organized as 262,144 words by 8 bits. The device is designed and fabricated using NanoAmp’s advanced CMOS technolog

文件：212.47 Kbytes 页数：9 Pages

NANOAMP

2Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 256Kx8 bit

Overview The N02M083WL1A is an integrated memory device intended for non life-support (Class 1 or 2) medical applications. This device comprises a 2 Mbit Static Random Access Memory organized as 262,144 words by 8 bits. The device is designed and fabricated using NanoAmp’s advanced CMOS technolog

文件：212.47 Kbytes 页数：9 Pages

NANOAMP

2Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 256Kx8 bit

Overview The N02M083WL1A is an integrated memory device intended for non life-support (Class 1 or 2) medical applications. This device comprises a 2 Mbit Static Random Access Memory organized as 262,144 words by 8 bits. The device is designed and fabricated using NanoAmp’s advanced CMOS technolog

文件：212.47 Kbytes 页数：9 Pages

NANOAMP

2Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 256Kx8 bit

Overview The N02M083WL1A is an integrated memory device intended for non life-support (Class 1 or 2) medical applications. This device comprises a 2 Mbit Static Random Access Memory organized as 262,144 words by 8 bits. The device is designed and fabricated using NanoAmp’s advanced CMOS technolog

文件：212.47 Kbytes 页数：9 Pages

NANOAMP

2Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 256Kx8 bit

Overview The N02M083WL1A is an integrated memory device intended for non life-support (Class 1 or 2) medical applications. This device comprises a 2 Mbit Static Random Access Memory organized as 262,144 words by 8 bits. The device is designed and fabricated using NanoAmp’s advanced CMOS technolog

文件：212.47 Kbytes 页数：9 Pages

NANOAMP

Polyurethane Adhesive-Back Bumpers

文件：147.88 Kbytes 页数：1 Pages

HEYCO