IR Enhanced Photo Detectors

Features • High Break Down Voltage • Low Dark Current • Low Noise • Fast Rise/Fall Time Applications) • Fiber Optics • Military / Aerospace • Industrial Controls

文件：43.32 Kbytes 页数：1 Pages

MICROSEMI

美高森美

IR Enhanced Photo Detectors

Features • High Break Down Voltage • Low Dark Current • Low Noise • Fast Rise/Fall Time Applications) • Fiber Optics • Military / Aerospace • Industrial Controls

文件：43.32 Kbytes 页数：1 Pages

MICROSEMI

美高森美

IR Enhanced Photo Detectors

Features • High Break Down Voltage • Low Dark Current • Low Noise • Fast Rise/Fall Time Applications) • Fiber Optics • Military / Aerospace • Industrial Controls

文件：43.32 Kbytes 页数：1 Pages

MICROSEMI

美高森美

Bridge Rectifiers

文件：89.03 Kbytes 页数：2 Pages

MICROSEMI

美高森美

DUAL NPN MEDIUM POWER HIGH GAIN TRANSISTORS

Summary BVCEO > 17.5V IC(cont) = 5A VCE(sat) Description Advanced process capability has been used to achieve this high performance device. Combining two NPN transistors in the SM-8 package provides a compact solution for the intended applications. Features • Dual NPN device

文件：57.03 Kbytes 页数：3 Pages

ZETEX

NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR

FEATURES * VCEV=50V * Very Low Saturation Voltages * High Gain * 20 Amps pulse current APPLICATIONS * LCD Backlight Convertors * Emergency Lighting * DC-DC Convertors

文件：105.55 Kbytes 页数：4 Pages

ZETEX