MX25L6406E集成电路（IC）的存储器规格书PDF中文资料

MX25L6406E属于集成电路（IC）的存储器。由旺宏电子股份有限公司制造生产的MX25L6406E存储器存储器是集成电路上用作数据存储设备的半导体器件。这些器件分为非易失性或易失性两种，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、闪存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。这些器件的存储容量为 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、单线、SPI、UFS、Xccela 总线和 1-线。

GENERAL DESCRIPTION

The device feature a serial peripheral interface and software protocol allowing operation on a simple 3-wire bus. The three bus signals are a clock input (SCLK), a serial data input (SI), and a serial data output (SO). Serial access to the device is enabled by CS# input.

FEATURES

GENERAL

• Single Power Supply Operation

- 2.7 to 3.6 volt for read, erase, and program operations

• Serial Peripheral Interface compatible -- Mode 0 and Mode 3

• 67,108,864 x 1 bit structure or 33,554,432 x 2 bits (Dual Output mode) structure

• 2048 Equal Sectors with 4K byte each

- Any Sector can be erased individually

• 128 Equal Blocks with 64K byte each

- Any Block can be erased individually

• Program Capability

- Byte base

- Page base (256 bytes)

• Latch-up protected to 100mA from -1V to Vcc +1V

PERFORMANCE

• High Performance

- Fast access time: 86MHz serial clock

- Serial clock of Dual Output mode: 80MHz

- Fast program time: 0.6ms(typ.) and 3ms(max.)/page

- Byte program time: 9us (typ.)

- Fast erase time: 40ms(typ.) /sector; 0.4s(typ.)/block

• Low Power Consumption

- Low active read current: 25mA(max.) at 86MHz

- Low active programming current: 15mA (typ.)

- Low active sector erase current: 9mA (typ.)

- Low standby current: 12uA (typ.)

- Deep power-down mode 2uA (typ.)

• Typical 100,000 erase/program cycles

• 20 years of data retention