MX25L6405DMI-12G中文资料​​​​​​​​​​​​旺宏电子数据手册PDF规格书

GENERAL DESCRIPTION

The MX25L1605D are 16,777,216 bit serial Flash memory, which is configured as 2,097,152 x 8 internally. When it is in two I/O read mode, the structure becomes 8,388,608 bits x 2. The MX25L3205D are 33,554,432 bit serial Flash memory, which is configured as 4,194,304 x 8 internally. When it is in two I/O read mode, the structure becomes 16,772,216 bits

x 2. The MX25L6405D are 67,108,864 bit serial Flash memory, which is configured as 8,388,608 x 8 internally. When it is in two I/O read mode, the structure becomes 33,554,432 bits x 2. (please refer to the Two I/O Read mode section). The MX25L1605D/3205D/6405D feature a serial peripheral interface and software protocol allowing operation on a simple 3-wire bus. The three bus signals are a clock input (SCLK), a serial data input (SI), and a serial data output (SO). Serial

access to the device is enabled by CS# input.

FEATURES

GENERAL

• Serial Peripheral Interface compatible -- Mode 0 and Mode 3

• 16M:16,777,216 x 1 bit structure or 8,388,608 x 2 bits (two I/O read mode) structure

32M:33,554,432 x 1 bit structure or 16,772,216 x 2 bits (two I/O read mode) structure

64M:67,108,864 x 1 bit structure or 33,554,432 x 2 bits (two I/O read mode) structure

• 512 Equal Sectors with 4K byte each (16Mb)

1024 Equal Sectors with 4K byte each (32Mb)

2048 Equal Sectors with 4K byte each (64Mb)

- Any Sector can be erased individually

• 32 Equal Blocks with 64K byte each (16Mb)

64 Equal Blocks with 64K byte each (32Mb)

128 Equal Blocks with 64K byte each (64Mb)

- Any Block can be erased individually

• Single Power Supply Operation

- 2.7 to 3.6 volt for read, erase, and program operations

• Latch-up protected to 100mA from -1V to Vcc +1V

• Low Vcc write inhibit is from 1.5V to 2.5V

PERFORMANCE

• High Performance

- Fast access time: 86MHz serial clock (15pF + 1TTL Load) and 66MHz serial clock (30pF + 1TTL Load)

- Serial clock of two I/O read mode : 50MHz (15pF + TTL Load), which is equivalent to 100MHz

- Fast program time: 1.4ms(typ.) and 5ms(max.)/page (256-byte per page)

- Byte program time: 9us (typical)

- Continuously program mode (automatically increase address under word program mode)

- Fast erase time: 60ms(typ.) /sector (4K-byte per sector) ; 0.7s(typ.) /block (64K-byte per block); 14s(typ.) /chip for 16Mb, 25s(typ.) for 32Mb, and 50s(typ.) for 64Mb

• Low Power Consumption

- Low active read current: 25mA(max.) at 86MHz, 20mA(max.) at 66MHz and 10mA(max.) at 33MHz

- Low active programming current: 20mA (max.)

- Low active erase current: 20mA (max.)

- Low standby current: 20uA (max.)

- Deep power-down mode 1uA (typical)

• Typical 100,000 erase/program cycles