首页 >MWCT1035SFVLHPR>规格书列表
零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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ElectricalSpecifications | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | NJSEMI | ||
SCRs1-70AMPSNON-SENSITIVEGATE Features ●ElectricallyIsolatedPackages ●HighVoltageCapability-30-600Volts ●HighSurgeCapability-upto950Amps ●GlassPassivatedChip | Teccor Teccor Electronics | Teccor | ||
PhotovoltaicSolarcellProtectionSchottkyRectifier45V/10ASCHOTTKYBARRIERRECTIFIER | FS First Silicon Co., Ltd | FS | ||
SCHOTTKYBARRIERRECTIFIERS(10A,30-45V) SWITCHMODEPOWERRECTIFIERSDPAKSURFACEMOUNTPOWERPACKAGE TheDPAKPowerrectifieremploystheSchottkyBarrierprinciplewithaMolybdenumbarriermetal.Thesestate-of-the-artdeviceshavethefollowingfeatures: *LowForwardVoltage *LowSwitchingnoise *HighSurgeCapacity *Guara | MOSPECMospec Semiconductor 统懋统懋半导体股份有限公司 | MOSPEC | ||
LowVFSchottkyBarrierRectifiers | SIRECTIFIERSirectifier Semiconductors 矽莱克电子江苏矽莱克电子科技有限公司 | SIRECTIFIER | ||
10ASURFACEMOUNTSCHOTTKYBARRIERRECTIFIER Features ●SchottkyBarrierChip ●GuardRingDieConstructionforTransientProtection ●LowPowerLoss,HighEfficiency ●HighSurgeCapability ●HighCurrentCapabilityandLowForwardVoltageDrop ●SurgeOverloadRatingto125APeak ●ForUseinLowVoltage,HighFrequenc | DIODESDiodes Incorporated 美台半导体 | DIODES | ||
10ASCHOTTKYBARRIERRECTIFIER Features •SchottkyBarrierChip •GuardRingDieConstructionforTransientProtection •LowPowerLoss,HighEfficiency •HighSurgeCapability •HighCurrentCapabilityandLowForwardVoltageDrop •ForUseinLowVoltage,HighFrequencyInverters,Free Wheeling,andPolarityProtec | DIODESDiodes Incorporated 美台半导体 | DIODES | ||
10ASCHOTTKYBARRIERRECTIFIER | DIODESDiodes Incorporated 美台半导体 | DIODES | ||
LowVFSchottkyBarrierRectifiers FEATURES *Metalofsiliconrectifier,majoritycarrierconducton *Guardringfortransientprotection *Lowpowerloss,highefficiency *Highcurrentcapability,lowVF *Highsurgecapacity *Foruseinlowvoltage,highfrequencyinverters,freewhelling,andpolarityprotec | SIRECTIFIERSirectifier Semiconductors 矽莱克电子江苏矽莱克电子科技有限公司 | SIRECTIFIER | ||
SCHOTTKYBARRIERRECTIFIER VOLTAGERANGE:30---100V CURRENT:10A FEATURES ◇Metal-Semiconductorjunctionwithguardring ◇Epitaxialconstruction ◇Lowforwardvoltagedrop,lowswitchinglosses ◇Highsurgecapability ◇Foruseinlowvoltage,highfrequencyinvertersfreewheeling,andpolaritypro | BILINGalaxy Semi-Conductor Holdings Limited 银河微电常州银河世纪微电子股份有限公司 | BILIN |
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