RF LDMOS Wideband Integrated Power Amplifiers

文件：542.29 Kbytes 页数：16 Pages

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RF LDMOS Wideband Integrated Power Amplifiers

文件：542.29 Kbytes 页数：16 Pages

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RF LDMOS Wideband Integrated Power Amplifiers

文件：665.65 Kbytes 页数：20 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF LDMOS Wideband Integrated Power Amplifiers

文件：479.93 Kbytes 页数：16 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF LDMOS Wideband Integrated Power Amplifiers

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MOTOROLA

摩托罗拉

RF LDMOS Wideband Integrated Power Amplifiers

文件：479.93 Kbytes 页数：16 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

1930-1990 MHz, 30 W, 26 V GSM/GSM EDGE, W-CDMA, PHS RF LDMOS Wideband Integrated Power Amplifiers

OverviewReplaced by MW5IC2030NBR1 (GNBR1). There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead-free terminations. The MW5IC2030MBR1 and MW5IC2030GMBR1 wideband integrated circuits are designed with on-chip matching that \n \n\n\nFinal Application\n•Typical CDMA Performance: VDD = 27 Volts, IDQ1 = 160 mA,\nIDQ2 = 230 mA, Pout = 5 Watts Avg., Full Frequency Band, \nIS–95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13), Channel \nBandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF.\nPower Gain:;

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