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MVDF1N05ER2G中文资料安森美半导体数据手册PDF规格书

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厂商型号

MVDF1N05ER2G

功能描述

Power MOSFET 2 A, 50 V, N-Channel SO-8, Dual

文件大小

211.3 Kbytes

页面数量

7

生产厂商

ONSEMI

中文名称

安森美半导体

网址

网址

数据手册

下载地址一下载地址二到原厂下载

更新时间

2025-10-13 10:12:00

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MVDF1N05ER2G规格书详情

These miniature surface mount MOSFETs feature ultra low RDS(on)

and true logic level performance. They are capable of withstanding

high energy in the avalanche and commutation modes and the

drain−to−source diode has a low reverse recovery time. These devices

are designed for use in low voltage, high speed switching applications

where power efficiency is important. Typical applications are dc−dc

converters, and power management in portable and battery powered

products such as computers, printers, cellular and cordless phones.

They can also be used for low voltage motor controls in mass storage

products such as disk drives and tape drives. The avalanche energy is

specified to eliminate the guesswork in designs where inductive loads

are switched and offer additional safety margin against unexpected

voltage transients.

特性 Features

• Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life

• Logic Level Gate Drive − Can Be Driven by Logic ICs

• Miniature SO−8 Surface Mount Package − Saves Board Space

• Diode Is Characterized for Use In Bridge Circuits

• Diode Exhibits High Speed

• Avalanche Energy Specified

• Mounting Information for SO−8 Package Provided

• IDSS Specified at Elevated Temperature

• This is a Pb−Free Device

• MVDF Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC−Q101

Qualified and PPAP Capable

产品属性

  • 型号:

    MVDF1N05ER2G

  • 功能描述:

    MOSFET N-CH 50V 2A 8-SOIC

  • RoHS:

  • 类别:

    分离式半导体产品 >> FET - 阵列

  • 系列:

    -

  • 产品目录绘图:

    8-SOIC Mosfet Package

  • 标准包装:

    1

  • 系列:

    - FET

  • 型:

    2 个 N 沟道(双) FET

  • 特点:

    逻辑电平门

  • 漏极至源极电压(Vdss):

    60V 电流 - 连续漏极(Id) @ 25°

  • C:

    3A 开态Rds(最大)@ Id, Vgs @ 25°

  • C:

    75 毫欧 @ 4.6A,10V Id 时的

  • Vgs(th)(最大):

    3V @ 250µA 闸电荷(Qg) @

  • Vgs:

    20nC @ 10V 输入电容(Ciss) @

  • Vds:

    - 功率 -

  • 最大:

    1.4W

  • 安装类型:

    表面贴装

  • 封装/外壳:

    PowerPAK? SO-8

  • 供应商设备封装:

    PowerPAK? SO-8

  • 包装:

    Digi-Reel®

  • 产品目录页面:

    1664(CN2011-ZH PDF)

  • 其它名称:

    SI7948DP-T1-GE3DKR

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