TPC8103

P-Channel30-V(D-S)MOSFET

TPC8103

TRANSISTORSILICONPCHANNELMOSTYPE

LithiumIonBatteryApplications PortableEquipmentApplications NotebookPCs •Smallfootprintduetosmallandthinpackage •Lowdrain-sourceONresistance:RDS(ON)=9.5mΩ(typ.) •Highforwardtransferadmittance:|Yfs|=20S(typ.) •Lowleakagecurrent:IDSS=−10µA(max)(VDS=−

TPCA8103

TOSHIBAFieldEffectTransistorSiliconPChannelMOSType(U-MOS4)

NotebookPCApplications PortableEquipmentApplications •Smallfootprintduetoasmallandthinpackage •Lowdrain-sourceON-resistance: RDS(ON)=9.4mΩ(typ.)(VGS=−10V) •Lowleakagecurrent:IDSS=-10μA(max)(VDS=-30V) •Enhancementmode:

TPCA8103

P-Channel30-V(D-S)MOSFET

FEATURES •Halogen-free •TrenchFET®PowerMOSFET •100RgTested APPLICATIONS •Notebook -LoadSwitch

TPCA8103

LithiumIonBatteryApplicationsNotebookPCApplicationsPortableEquipmentApplications

TPCC8103

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TPCC8103

NoteboookPCApplicationsPortableEqipmentApplications

TPCC8103

FieldEffectTransistorSiliconP-ChannelMOSType(U-MOS??

NotebookPCApplications PortableEquipmentApplications •Smallfootprintduetoasmallandthinpackage •Lowdrain-sourceON-resistance: RDS(ON)=9.4mΩ(typ.)(VGS=−10V) •Lowleakagecurrent:IDSS=-10μA(max)(VDS=-30V) •Enhancementmode:V

TPCF8103

TOSHIBAFieldEffectTransistorSiliconPChannelMOSType(U-MOSIII)

TPCF8103

TRANSISTORSILICONPCHANNELMOSTYPE(U竊뛏OS??

SwitchingApplications DC-DCConverterApplications •HighDCcurrentgain:hFE=100to300(IC=0.3A) •Lowcollector-emittersaturation:VCE(sat)=0.2V(max) •High-speedswitching:tf=100ns(typ.)