MUX508IDR

Low-Capacitance, Low-Charge-Injection, Precision, Analog Multiplexers

MUX508IPW

Low-Capacitance,Low-Charge-Injection,Precision,AnalogMultiplexers

MUX508IPW

Low-Capacitance,Low-Charge-Injection,Precision,AnalogMultiplexers

MUX508IPWR

Low-Capacitance,Low-Charge-Injection,Precision,AnalogMultiplexers

MUX508IPWR

Low-Capacitance,Low-Charge-Injection,Precision,AnalogMultiplexers

NCP508

VeryLowNoise,FastTurnOn,50mALowDropoutVoltageRegulator

NDB508A

N-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription TheseN-channelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocesshasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,a

NDB508A

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=19A@TC=25℃ ·DrainSourceVoltage-VDSS=80V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.08Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

NDB508AE

N-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription TheseN-channelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocesshasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,a

NDB508AE

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=19A@TC=25℃ ·DrainSourceVoltage-VDSS=80V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.08Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.