丝印：MUX508B；Package：TSSOP；MUX50x 36-V, Low-Capacitance, Low-Charge-Injection, Precision, Analog Multiplexers

1 Features 1• Low On-Capacitance – MUX508: 9.4 pF – MUX509: 6.7 pF • Low Input Leakage: 10 pA • Low Charge Injection: 0.3 pC • Rail-to-Rail Operation • Wide Supply Range: ±5 V to ±18 V, 10 V to 36 V • Low On-Resistance: 125 Ω • Transition Time: 92 ns • Break-Before-Make Switching Action

文件：953.38 Kbytes 页数：42 Pages

TI

德州仪器

丝印：MUX508B；Package：TSSOP(PW)；MUX50x 36-V, Low-Capacitance, Low-Charge-Injection, Precision, Analog Multiplexers

1 Features 1• Low On-Capacitance – MUX508: 9.4 pF – MUX509: 6.7 pF • Low Input Leakage: 10 pA • Low Charge Injection: 0.3 pC • Rail-to-Rail Operation • Wide Supply Range: ±5 V to ±18 V, 10 V to 36 V • Low On-Resistance: 125 Ω • Transition Time: 92 ns • Break-Before-Make Switching Action

文件：951.51 Kbytes 页数：42 Pages

TI

德州仪器

Very Low Noise, Fast Turn On, 50 mA Low Dropout Voltage Regulator

文件：2.36105 Mbytes 页数：15 Pages

ONSEMI

安森美半导体

N-Channel Enhancement Mode Field Effect Transistor

General Description These N-channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, a

文件：73.44 Kbytes 页数：6 Pages

FAIRCHILD

仙童半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 19A@ TC=25℃ ·Drain Source Voltage -VDSS= 80V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.08Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：306.17 Kbytes 页数：2 Pages

ISC

无锡固电