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MURS120T3G

Surface Mount Ultrafast Power Rectifiers

Ideallysuitedforhighvoltage,highfrequencyrectification,orasfreewheelingandprotectiondiodesinsurfacemountapplicationswherecompactsizeandweightarecriticaltothesystem. Features •SmallCompactSurfaceMountablePackagewithJ−BendLeads •RectangularPackageforA

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MURS120T3G

Power Rectifier, Ultra-Fast Recovery, 1 A, 50-600 V

Features •SmallCompactSurfaceMountablePackagewithJ−BendLeads •RectangularPackageforAutomatedHandling •HighTemperatureGlassPassivatedJunction •LowForwardVoltageDrop(0.71to1.05VMax@1.0A,TJ=150°C) •NRVUSandSURS8PrefixesforAutomotiveandOtherApplications

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MURS120T3G

Surface Mount Ultrafast Power Rectifiers

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MURS120T3G

Surface Mount Ultrafast Power Rectifiers

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MURS120T3G

ULTRAFAST RECTIFIERS 1.0 AMPERE, 50??00 VOLTS

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MURS120T3G

Surface Mount Ultrafast Power Rectifiers

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MURS120T3G

包装:管件 封装/外壳:DO-214AA,SMB 类别:分立半导体产品 二极管 - 整流器 - 单 描述:DIODE GEN PURP 200V 1A SMB

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MBRA120T3

ChipSchottkyBarrierDiodes-Siliconepitaxialplanertype

Siliconepitaxialplanertype Features •PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-OUtilizingFlameRetardantEpoxyMoldingCompound. •Forsurfacemountedapplications. •ExceedsenvironmentalstandardsofMIL-S-19500/228 •Lowleakagecurrent.

FORMOSAFormosa MS

美丽微半导体美丽微半导体股份有限公司

MBRA120T3

CHIPSCHOTTKYBARRIERDIODES

FEATURES •PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-OUtilizingFlameRetardantEpoxyMoldingCompound. •Forsurfacemountedapplications. •ExceedsenvironmentalstandardsofMIL-S-19500/228 •Lowleakagecurrent.

TAYCHIPSTShenzhen Taychipst Electronic Co., Ltd

泰迪斯电子深圳市泰迪斯电子科技有限公司

MBRS120T3

SurfaceMountSchottkyPowerRectifier

SurfaceMountSchottkyPowerRectifier ThisdeviceemploystheSchottkyBarrierprincipleinalargeareametal−to−siliconpowerdiode.State−of−the−artgeometryfeaturesepitaxialconstructionwithoxidepassivationandmetaloverlaycontact.Ideallysuitedforlowvoltage,highfrequencyrectif

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MBRS120T3G

SurfaceMountSchottkyPowerRectifier

SurfaceMountSchottkyPowerRectifier ThisdeviceemploystheSchottkyBarrierprincipleinalargeareametal−to−siliconpowerdiode.State−of−the−artgeometryfeaturesepitaxialconstructionwithoxidepassivationandmetaloverlaycontact.Ideallysuitedforlowvoltage,highfrequencyrectif

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MBRS120T3G

SurfaceMountSchottkyPowerRectifier

SurfaceMountSchottkyPowerRectifier ThisdeviceemploystheSchottkyBarrierprincipleinalargeareametal−to−siliconpowerdiode.State−of−the−artgeometryfeaturesepitaxialconstructionwithoxidepassivationandmetaloverlaycontact.Ideallysuitedforlowvoltage,highfrequencyrectif

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MURA120T3

SurfaceMountUltrafastPowerRectifiers

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MURA120T3

ULTRAFASTRECTIFIERS1AMPERE,100??00VOLTS

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MURA120T3G

SurfaceMountUltrafastPowerRectifiers

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MURA120T3G

1.0AmpereSurfaceMountTypeUltraFastRecoveryRectifierDiode

THINKISEMIThinki Semiconductor Co., Ltd.

思祁半导体思祁半导体有限公司

MURA120T3G

SurfaceMountUltrafastPowerRectifiers

Ideallysuitedforhighvoltage,highfrequencyrectification,oras freewheelingandprotectiondiodesinsurfacemountapplications wherecompactsizeandweightarecriticaltothesystem. Features •SmallCompactSurfaceMountablePackagewithJ−BendLeads •RectangularPackageforAut

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MURA120T3G

ULTRAFASTRECTIFIERS1AMPERE,100??00VOLTS

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MURS120T3

SurfaceMountUltrafastPowerRectifiers

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MURS120T3

ULTRAFASTRECTIFIERS1.0AMPERE,50??00VOLTS

ONSEMION Semiconductor

安森美半导体安森美半导体公司

产品属性

  • 产品编号:

    MURS120T3G

  • 制造商:

    onsemi

  • 类别:

    分立半导体产品 > 二极管 - 整流器 - 单

  • 包装:

    管件

  • 二极管类型:

    标准

  • 电流 - 平均整流 (Io):

    1A

  • 速度:

    快速恢复 =< 500ns,> 200mA(Io)

  • 安装类型:

    表面贴装型

  • 封装/外壳:

    DO-214AA,SMB

  • 供应商器件封装:

    SMB

  • 工作温度 - 结:

    -65°C ~ 175°C

  • 描述:

    DIODE GEN PURP 200V 1A SMB

供应商型号品牌批号封装库存备注价格
ON
23+
SMB
65000
公司常备大量原装现货可开13%增票!
询价
ON
21+
SMB
60000
深圳原装现货
询价
ON
22+
2500
ON代理分销,价格优势现货假一罚十
询价
ON/安森美
22+
SMB
98800
欢迎来电咨询 只做原装
询价
ON
23+
SMB
20000
工厂现货!原装正品!
询价
ON/安森美
22+
SMB
120000
原装正品
询价
ON/安森美
22+
SMB
98800
欢迎来电咨询 只做原装
询价
ON/安森美
23+
SMB-2
20000
热卖优势现货
询价
ON/安森美
21+
DO-214AA
600000
航宇科工半导体-中国航天科工集团战略合作伙伴!
询价
ON/安森美
24+
SMB
10000
只做原装欢迎含税交易,假一赔十,放心购买
询价
更多MURS120T3G供应商 更新时间2024-4-28 8:30:00