MURC405-MURC460 Ultrafast Silicon Die

文件：285.43 Kbytes 页数：4 Pages

SENSITRON

Silicon P-Channel JFET Transistor AF Amp

Absolute Maximum Ratings: Drain–Gate Voltage, VDG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V Reverse Gate–Source Voltage, VGSR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V Gate Current, IG . . . . . . .

文件：21.48 Kbytes 页数：2 Pages

NTE

NPN Darlington With built-in avalanche diode

NPN Darlington With built-in avalanche diode External dimensions D • • • STA (10-pin)

文件：19.11 Kbytes 页数：1 Pages

SANKEN

三垦

SINGLE CHANNEL HIGH SIDE SMART SOLID STATE RELAY

DESCRIPTION The VN460SP is a monolithic device made using SGS-THOMSON Vertical Intelligent Power Technology, intended for driving resistive or inductive loads with one side connected to ground. Built-in thermal shut-down protects the chip from over temperature and short circuit. The control inp

文件：76.76 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体