首页 >MURB2540C-TP>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
Lowvoltagefast-switchingPNPpowerbipolartransistor Description ThedeviceisaPNPtransistormanufacturedusingnew“PB-HCD”(PowerBipolarHighCurrentDensity)technology.Theresultingtransistorshowsexceptionalhighgainperformancescoupledwithverylowsaturationvoltage. Features ■Verylowcollector-emittersaturationvoltage ■Hig | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
Triple750MHzVoltageFeedbackOpAmpwithEnableFeature | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
Triple750MHzVoltageFeedbackOpAmpwithEnableFeature | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
LowPower,HighSpeed,CurrentFeedbackOpAmps | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
Triple750MHzVoltageFeedbackOpAmpwithEnableFeature | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
Triple750MHzVoltageFeedbackOpAmpwithEnableFeature | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
MixerandOscillatorforTVTuner | NJRCNew Japan Radio 新日本无线株式会社 | NJRC | ||
MixerandOscillatorforTVTuner | NJRCNew Japan Radio 新日本无线株式会社 | NJRC | ||
SiliconNPNTransistorDarlington,HighVoltageSwitch Features: •HighDCCurrentGain:hFE=600Min(VCE=2V,IC=2A) •MonolithicConstructionw/Built–InBase–EmitterShuntResistor | NTE NTE Electronics | NTE | ||
40V,500mANPNlowVCEsat(BISS)transistor Features *Lowcollector-emittersaturationvoltageVCEsat *Highcollectorcurrentcapability:ICandICM *Highcollectorcurrentgain(hFE)athighIC *Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areathanforconventionaltransistors | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA |
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