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SCS20120B

1200V/20ASiCSchottkyBarrierDiode

Features HalogenFree,RoHSCompliant LowForwardVoltage(VF) Shorterrecoverytime Highspeedswitching Highsurgecurrentcapability Enablinghigherfrequencyandincreasedpowerdensity Systemefficiencyimprovement Systemcostandsizesavingsduetothereducedcoolingrequirements

GWSEMIGoodwork Semiconductor Co., Ltd .

唯聖電子唯聖電子有限公司

SCS20120P

1200V/20ASiCSchottkyBarrierDiode

Features HalogenFree,RoHSCompliant LowForwardVoltage(VF) Shorterrecoverytime Highspeedswitching Highsurgecurrentcapability Enablinghigherfrequencyandincreasedpowerdensity Systemefficiencyimprovement Systemcostandsizesavingsduetothereducedcoolingrequirements

GWSEMIGoodwork Semiconductor Co., Ltd .

唯聖電子唯聖電子有限公司

SCS20120PCT

1200V/20ASiCSchottkyBarrierDiode

Features HalogenFree,RoHSCompliant LowForwardVoltage(VF) Shorterrecoverytime Highspeedswitching Highsurgecurrentcapability Enablinghigherfrequencyandincreasedpowerdensity Systemefficiencyimprovement Systemcostandsizesavingsduetothereducedcoolingrequirements

GWSEMIGoodwork Semiconductor Co., Ltd .

唯聖電子唯聖電子有限公司

SDT20120CT

20ATRENCHSCHOTTKYRECTIFIER

Features LowForwardVoltageDrop ExcellentHighTemperatureStability Soft,FastSwitchingCapability Lead-FreeFinish;RoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) Forautomotiveapplicationsrequiringspecificchangecontrol (i.e.partsqualifiedtoAEC

DIODESDiodes Incorporated

达尔科技

SDT20120CTFP

20ATRENCHSCHOTTKYRECTIFIER

Features LowForwardVoltageDrop ExcellentHighTemperatureStability Soft,FastSwitchingCapability Lead-FreeFinish;RoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) Forautomotiveapplicationsrequiringspecificchangecontrol (i.e.partsqualifiedtoAEC

DIODESDiodes Incorporated

达尔科技

SDT20120VCT

20ATRENCHSCHOTTKYRECTIFIER

Features LowForwardVoltageDrop ExcellentHighTemperatureStability Soft,FastSwitchingCapability Lead-FreeFinish;RoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) Forautomotiveapplicationsrequiringspecificchangecontrol (i.e.partsqual

DIODESDiodes Incorporated

达尔科技

SDUR20120W

ULTRAFASTPLASTICRECTIFIER

SMCSintered Metal Company

烧结金属烧结金属公司

SDURB20120CT

ULTRAFASTPLASTICRECTIFIER

SMCSintered Metal Company

烧结金属烧结金属公司

SDURF20120CT

ULTRAFASTPLASTICRECTIFIER

SMCSintered Metal Company

烧结金属烧结金属公司

SDURF20120CT

20.0AmpereInsulatedDualCommonCathodeUltraFastRecoveryRectifiers

THINKISEMIThinki Semiconductor Co., Ltd.

思祁半导体思祁半导体有限公司

SDURF20120CTD

20.0AmpereInsulatedDualTandemPolarityUltraFastRecoveryRectifiers

THINKISEMIThinki Semiconductor Co., Ltd.

思祁半导体思祁半导体有限公司

SDURF20120CTR

20.0AmpereInsulatedDualCommonAnodeUltraFastRecoveryRectifiers

THINKISEMIThinki Semiconductor Co., Ltd.

思祁半导体思祁半导体有限公司

SDURF20120CTS

20.0AmpereInsulatedDualSeriesConnectionUltraFastRecoveryRectifiers

THINKISEMIThinki Semiconductor Co., Ltd.

思祁半导体思祁半导体有限公司

SKH20120

SolidStateRelayforprintedcircuitboard

CELDUCcelduc Relais (Shanghai)Co., Ltd

凡纪继电器凡纪继电器(上海)有限公司

SKL20120

SolidStateRelayforprintedcircuitboard

CELDUCcelduc Relais (Shanghai)Co., Ltd

凡纪继电器凡纪继电器(上海)有限公司

SRF20120C

SCHOTTKYBARRIERRECTIFIERS20AMPERES120VOLTS

SwitchmodeFullPlasticDualSchottkyBarrierPowerRectifiers UsingtheSchottkyBarrierprinciplewithaMolybdenumbarriermetal.Thesestate-of-the-artgeometryfeaturesepitaxialconstructionwithoxidepassivationandmetaloverlaycontact.Ideallysuitedforlowvoltage,highfrequencyrec

MOSPEC

MOSPEC

SRF20120CE

SwitchmodeFullPlasticDualSchottkyBarrierPowerRectifiers

SwitchmodeFullPlasticDualSchottkyBarrierPowerRectifiers UsingtheSchottkyBarrierprinciplewithaMolybdenumbarriermetal.Thesestate-of-the-artgeometryfeaturesepitaxialconstructionwithoxidepassivationandmetaloverlaycontact.Ideallysuitedforlowvoltage,highfrequencyrec

MOSPEC

MOSPEC

SSTS20120

HighJunctionTemperature

SILIKRONSilikron Semiconductor Co.,LTD.

Silikron Semiconductor Co.,LTD.

ST20120

SCHOTTKYRECTIFIER

SMCSintered Metal Company

烧结金属烧结金属公司

ST20120

SCHOTTKYRECTIFIER

Features 150CTJoperation Ultralowforwardvoltagedrop Highpurity,hightemperatureepoxyencapsulationfor enhancedmechanicalstrengthandmoistureresistance Highfrequencyoperation Guardringforenhancedruggednessandlongtermreliability TrenchMOSSchottkytechnol

SMCDIODESMC Diode Solutions

桑德斯微电子器件(南京)有限公司

供应商型号品牌批号封装库存备注价格
IR
2023+
TO-263
80000
一级代理/分销渠道价格优势 十年芯程一路只做原装正品
询价
IR
22+
TO-263
6000
终端可免费供样,支持BOM配单
询价
IR
23+
TO-263
8000
只做原装现货
询价
ON/安森美
TO-263
16240
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
IR
16+
原厂封装
330
原装现货假一罚十
询价
IR
2020+
TO-263
1600
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
IR
2016+
TO-263
6528
房间原装进口现货假一赔十
询价
IRF
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
VishaySemiconductorDiode
19+
TO-263
86267
原厂代理渠道,每一颗芯片都可追溯原厂;
询价
IR
23+
TO-263
11846
一级代理商现货批发,原装正品,假一罚十
询价
更多MURB20120CD供应商 更新时间2024-6-14 17:10:00