N-Channel Enhancement Mode Power MOSFET

文件：295.12 Kbytes 页数：8 Pages

CYSTEKEC

全宇昕科技

N-Channel Enhancement Mode Power MOSFET

Cystek

全宇昕科技

TMOS POWER FET 2.0 AMPERES 600 VOLTS RDS(on) = 3.8 OHMS

TMOS E-FET™ Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced TMOS E–FET is designed to withstand h

文件：219.5 Kbytes 页数：8 Pages

Motorola

摩托罗拉

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 2A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 6Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

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ISC

无锡固电

TMOS POWER FET 2.0 AMPERES 600 VOLTS RDS(on) = 3.8 OHMS

TMOS E-FET™ Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced TMOS E–FET is designed to withstand h

文件：219.5 Kbytes 页数：8 Pages

Motorola

摩托罗拉