Metal Can Infrared Emitter

Features Ultra High Power Output Chip Size 1.0x1.0mm Four Wire Bonds on Die Corners Standard 3−lead TO−39 Hermetic Package Two Catode Pins Must Be Externally Connected Together

文件：100.35 Kbytes 页数：2 Pages

MARKTECH

20V/μs, 10nV/√Hz, JFET Input Operational Amplifier

■ FEATURES (V+ / V− = ±15V, Typical value) ● High Slew Rate 20V/μs ● Low Noise 10nV/√Hz ● Low Distortion 0.0004 ● Gain Bandwidth 7MHz ● Supply Current at All Amplifiers 2.6mA ● High EMI Immunity EMIRR = 82dB (f = 1.8GHz) ● No Phase Reversal over Input Voltage Range ● Output Voltage close t

文件：779.83 Kbytes 页数：17 Pages

NJRC

日本无线

20V/μs, 10nV/√Hz, JFET Input Operational Amplifier

■ FEATURES (V+ / V− = ±15V, Typical value) ● High Slew Rate 20V/μs ● Low Noise 10nV/√Hz ● Low Distortion 0.0004% ● Gain Bandwidth 7MHz ● Supply Current at All Amplifiers 2.6mA ● High EMI Immunity EMIRR = 82dB (f = 1.8GHz) ● No Phase Reversal over Input Voltage Range ● Output Voltage cl

文件：780.2 Kbytes 页数：17 Pages

NISSHINBO

日清纺微电子

20V/μs, 10nV/√Hz, JFET Input Operational Amplifier

■ FEATURES (V+ / V− = ±15V, Typical value) ● High Slew Rate 20V/μs ● Low Noise 10nV/√Hz ● Low Distortion 0.0004 ● Gain Bandwidth 7MHz ● Supply Current at All Amplifiers 2.6mA ● High EMI Immunity EMIRR = 82dB (f = 1.8GHz) ● No Phase Reversal over Input Voltage Range ● Output Voltage close t

文件：779.83 Kbytes 页数：17 Pages

NJRC

日本无线