isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 10A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.18Ω(Max) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC converter,

文件：359.71 Kbytes 页数：2 Pages

ISC

无锡固电

POWER FIELD EFFECT TRANSISTOR

文件：168.25 Kbytes 页数：5 Pages

Motorola

摩托罗拉

Power Field Effect Transistor

文件：89.6 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

N-Channel Power MOSFETs, 3.0 A, 450 V/500 V

文件：157.18 Kbytes 页数：5 Pages

Fairchild

仙童半导体