MTB2P50E

Power MOSFET -500V -2A 6 Ohm Single P-Channel D2PAK; • Robust High Voltage Termination\n• Avalanche Energy Specified\n• Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode\n• Diode is Characterized for Use in Bridge Circuits\n• IDSS and VDS(on) Specified at Elevated Temperature\n• Short Heatsink Tab ManufacturedNot Sheared\n• Specially Designed Leadframe for Maximum Power Dissipation\n• Pb-Free Package is Available;

P-Channel Enhancement-Mode Silicon Gate The D2PAK package has the capability of housing a larger die than any existing surface mount package which allows it to be used in applications that require the use of surface mount components with higher power and lower RDS(on) capabilities. This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.

MTB2P50E

TMOS POWER FET 2.0 AMPERES 500 VOLTS;

恩XP

MTB2P50E

TMOS POWER FET 2.0 AMPERES 500 VOLTS

MTB2P50E

Power MOSFET 2 Amps, 500 Volts P?묬hannel D2PAK

MTB2P50ET4

Power MOSFET 2 Amps, 500 Volts P?묬hannel D2PAK

MTB2P50ET4G

Power MOSFET 2 Amps, 500 Volts P?묬hannel D2PAK

MTB2P50ET4G

丝印：D2PAK；Package：TO-263；N-Channel 650 V (D-S) MOSFET