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MT5C1008CW-25

128K x 8 SRAM WITH DUAL CHIP ENABLE AVAILABLE AS MILITARY SPECIFICATIONS

GENERAL DESCRIPTION The MT5C1008 SRAM employs high-speed, low power CMOS designs using a four-transistor memory cell, and are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • High Speed: 12, 15, 20, 25, 35, 45, 55 and 70 ns • Battery Backup: 2V data retentio

文件:187.15 Kbytes 页数:17 Pages

AUSTIN

MT5C1008CW-25/883C

128K x 8 SRAM WITH DUAL CHIP ENABLE AVAILABLE AS MILITARY SPECIFICATIONS

GENERAL DESCRIPTION The MT5C1008 SRAM employs high-speed, low power CMOS designs using a four-transistor memory cell, and are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • High Speed: 12, 15, 20, 25, 35, 45, 55 and 70 ns • Battery Backup: 2V data retentio

文件:187.15 Kbytes 页数:17 Pages

AUSTIN

MT5C1008CW-25L

128K x 8 SRAM WITH DUAL CHIP ENABLE AVAILABLE AS MILITARY SPECIFICATIONS

GENERAL DESCRIPTION The MT5C1008 SRAM employs high-speed, low power CMOS designs using a four-transistor memory cell, and are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • High Speed: 12, 15, 20, 25, 35, 45, 55 and 70 ns • Battery Backup: 2V data retentio

文件:187.15 Kbytes 页数:17 Pages

AUSTIN

MT5C1008CW-25L/883C

128K x 8 SRAM WITH DUAL CHIP ENABLE AVAILABLE AS MILITARY SPECIFICATIONS

GENERAL DESCRIPTION The MT5C1008 SRAM employs high-speed, low power CMOS designs using a four-transistor memory cell, and are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • High Speed: 12, 15, 20, 25, 35, 45, 55 and 70 ns • Battery Backup: 2V data retentio

文件:187.15 Kbytes 页数:17 Pages

AUSTIN

MT5C1008CW-25LSLASH883C

128K x 8 SRAM WITH DUAL CHIP ENABLE AVAILABLE AS MILITARY SPECIFICATIONS

GENERAL DESCRIPTION The MT5C1008 SRAM employs high-speed, low power CMOS designs using a four-transistor memory cell, and are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • High Speed: 12, 15, 20, 25, 35, 45, 55 and 70 ns • Battery Backup: 2V data retentio

文件:187.15 Kbytes 页数:17 Pages

AUSTIN

MT5C1008CW-25SLASH883C

128K x 8 SRAM WITH DUAL CHIP ENABLE AVAILABLE AS MILITARY SPECIFICATIONS

GENERAL DESCRIPTION The MT5C1008 SRAM employs high-speed, low power CMOS designs using a four-transistor memory cell, and are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • High Speed: 12, 15, 20, 25, 35, 45, 55 and 70 ns • Battery Backup: 2V data retentio

文件:187.15 Kbytes 页数:17 Pages

AUSTIN

详细参数

  • 型号:

    MT5C1008CW-25

  • 制造商:

    AUSTIN

  • 制造商全称:

    Austin Semiconductor

  • 功能描述:

    128K x 8 SRAM WITH DUAL CHIP ENABLE AVAILABLE AS MILITARY SPECIFICATIONS

供应商型号品牌批号封装库存备注价格
MICROSS
15+
32DIP.600
50
受控型号优势订货-军工器件供应商
询价
ASI
22+
cdip
12245
现货,原厂原装假一罚十!
询价
ASI
;11+
CDIP
18
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
ASI
25+
CDIP
21
只做原装进口!正品支持实单!
询价
Advanced Semiconductor Inc
2526+
Original
50000
只做原装优势现货库存,渠道可追溯
询价
ASI
QQ咨询
CDIP
70
全新原装 研究所指定供货商
询价
ASI
2308+
CDIP
4862
只做进口原装!假一赔百!自己库存价优!
询价
ASI
23+
CDIP
235
全新原装正品现货,支持订货
询价
24+
150
本站现库存
询价
MICROSS
24+
SMD
5500
长期供应原装现货实单可谈
询价
更多MT5C1008CW-25供应商 更新时间2025-12-1 14:37:00