MT5C1008CW-12数据手册Austin Semiconductor中文资料规格书

描述 Description

GENERAL DESCRIPTION
The MT5C1008 SRAM employs high-speed, low power CMOS designs using a four-transistor memory cell, and are fabricated using double-layer metal, double-layer polysilicon technology.FEATURES
• High Speed: 12, 15, 20, 25, 35, 45, 55 and 70 ns
• Battery Backup: 2V data retention
• Low power standby
• High-performance, low-power CMOS process
• Single +5V (+10%) Power Supply
• Easy memory expansion with CE1, CE2, and OE options.
• All inputs and outputs are TTL compatible

特性 Features

• High Speed: 12, 15, 20, 25, 35, 45, 55 and 70 ns
• Battery Backup: 2V data retention
• Low power standby
• High-performance, low-power CMOS process
• Single +5V (+10%) Power Supply
• Easy memory expansion with CE1, CE2, and OE options.
• All inputs and outputs are TTL compatible