MT5C1008CW-12

128K x 8 SRAM WITH DUAL CHIP ENABLE AVAILABLE AS MILITARY SPECIFICATIONS

GENERALDESCRIPTION TheMT5C1008SRAMemployshigh-speed,lowpowerCMOSdesignsusingafour-transistormemorycell,andarefabricatedusingdouble-layermetal,double-layerpolysilicontechnology. FEATURES •HighSpeed:12,15,20,25,35,45,55and70ns •BatteryBackup:2Vdataretentio

MT5C1008CW-12

128K x 8 SRAM WITH DUAL CHIP ENABLE AVAILABLE AS MILITARY SPECIFICATIONS; • High Speed: 12, 15, 20, 25, 35, 45, 55 and 70 ns\n• Battery Backup: 2V data retention\n• Low power standby\n• High-performance, low-power CMOS process\n• Single +5V (+10%) Power Supply\n• Easy memory expansion with CE1, CE2, and OE options.\n• All inputs and outputs are TTL compatible;

GENERAL DESCRIPTION\nThe MT5C1008 SRAM employs high-speed, low power CMOS designs using a four-transistor memory cell, and are fabricated using double-layer metal, double-layer polysilicon technology.FEATURES\n• High Speed: 12, 15, 20, 25, 35, 45, 55 and 70 ns\n• Battery Backup: 2V data retention\n• Low power standby\n• High-performance, low-power CMOS process\n• Single +5V (+10%) Power Supply\n• Easy memory expansion with CE1, CE2, and OE options.\n• All inputs and outputs are TTL compatible

MT5C1008CW-12L

128K x 8 SRAM WITH DUAL CHIP ENABLE AVAILABLE AS MILITARY SPECIFICATIONS

GENERALDESCRIPTION TheMT5C1008SRAMemployshigh-speed,lowpowerCMOSdesignsusingafour-transistormemorycell,andarefabricatedusingdouble-layermetal,double-layerpolysilicontechnology. FEATURES •HighSpeed:12,15,20,25,35,45,55and70ns •BatteryBackup:2Vdataretentio