首页 >MT47H64M16HR-25E AAT:H TR>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
MT47H64M16HR-25E AAT:H TR | 包装：卷带（TR） 封装/外壳：84-TFBGA 类别：集成电路（IC） 存储器 描述：IC DRAM 1GBIT PARALLEL 84FBGA | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | Micron | |
DDR2SDRAM DDR2SDRAM MT47H256M4–32Megx4x8banks MT47H128M8–16Megx8x8banks MT47H64M16–8Megx16x8banks Features •VDD=1.8V±0.1V,VDDQ=1.8V±0.1V •JEDEC-standard1.8VI/O(SSTL_18-compatible) •Differentialdatastrobe(DQS,DQS#)option •4n-bitprefetcharchitecture •Dup | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | Micron | ||
DDR2SDRAM DDR2SDRAM MT47H256M4–32Megx4x8banks MT47H128M8–16Megx8x8banks MT47H64M16–8Megx16x8banks Features •VDD=1.8V±0.1V,VDDQ=1.8V±0.1V •JEDEC-standard1.8VI/O(SSTL_18-compatible) •Differentialdatastrobe(DQS,DQS#)option •4n-bitprefetcharchitecture •Dup | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | Micron | ||
DDR2SDRAM DDR2SDRAM MT47H256M4–32Megx4x8banks MT47H128M8–16Megx8x8banks MT47H64M16–8Megx16x8banks Features •VDD=1.8V±0.1V,VDDQ=1.8V±0.1V •JEDEC-standard1.8VI/O(SSTL_18-compatible) •Differentialdatastrobe(DQS,DQS#)option •4n-bitprefetcharchitecture •Dup | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | Micron | ||
DDR2SDRAMMT47H256M4??32Megx4x8banksMT47H128M8??16Megx8x8banksMT47H64M16??8Megx16x8banks DDR2SDRAM MT47H256M4–32Megx4x8banks MT47H128M8–16Megx8x8banks MT47H64M16–8Megx16x8banks Features •VDD=1.8V±0.1V,VDDQ=1.8V±0.1V •JEDEC-standard1.8VI/O(SSTL_18-compatible) •Differentialdatastrobe(DQS,DQS#)option •4n-bitprefetcharchitecture •Dup | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | Micron | ||
DDR2SDRAM DDR2SDRAM MT47H256M4–32Megx4x8banks MT47H128M8–16Megx8x8banks MT47H64M16–8Megx16x8banks Features •VDD=1.8V±0.1V,VDDQ=1.8V±0.1V •JEDEC-standard1.8VI/O(SSTL_18-compatible) •Differentialdatastrobe(DQS,DQS#)option •4n-bitprefetcharchitecture •Dup | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | Micron | ||
1Gb:x4,x8,x16DDR2SDRAM DDR2SDRAM MT47H256M4–32Megx4x8banks MT47H128M8–16Megx8x8banks MT47H64M16–8Megx16x8banks Features •VDD=1.8V±0.1V,VDDQ=1.8V±0.1V •JEDEC-standard1.8VI/O(SSTL_18-compatible) •Differentialdatastrobe(DQS,DQS#)option •4n-bitprefetcharchitecture •Dup | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | Micron | ||
DDR2SDRAMMT47H256M4??32Megx4x8banksMT47H128M8??16Megx8x8banksMT47H64M16??8Megx16x8banks | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | Micron | ||
DDR2SDRAM DDR2SDRAM MT47H256M4–32Megx4x8banks MT47H128M8–16Megx8x8banks MT47H64M16–8Megx16x8banks Features •VDD=1.8V±0.1V,VDDQ=1.8V±0.1V •JEDEC-standard1.8VI/O(SSTL_18-compatible) •Differentialdatastrobe(DQS,DQS#)option •4n-bitprefetcharchitecture •Dup | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | Micron | ||
DDR2SDRAM DDR2SDRAM MT47H256M4–32Megx4x8banks MT47H128M8–16Megx8x8banks MT47H64M16–8Megx16x8banks Features •VDD=1.8V±0.1V,VDDQ=1.8V±0.1V •JEDEC-standard1.8VI/O(SSTL_18-compatible) •Differentialdatastrobe(DQS,DQS#)option •4n-bitprefetcharchitecture •Dup | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | Micron |
产品属性
- 产品编号：
MT47H64M16HR-25E AAT
- 制造商：
Micron Technology Inc.
- 类别：
集成电路（IC） > 存储器
- 系列：
Automotive, AEC-Q100
- 包装：
卷带（TR）
- 存储器类型：
易失
- 存储器格式：
DRAM
- 技术：
SDRAM - DDR2
- 存储容量：
1Gb（64M x 16）
- 存储器接口：
并联
- 写周期时间 - 字，页：
15ns
- 电压 - 供电：
1.7V ~ 1.9V
- 工作温度：
-40°C ~ 105°C（TC）
- 安装类型：
表面贴装型
- 封装/外壳：
84-TFBGA
- 供应商器件封装：
84-FBGA（8x12.5）
- 描述：
IC DRAM 1GBIT PARALLEL 84FBGA
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MICRON |
21+ |
BGA/TSOP |
50000 |
特价来袭!美光一级代理入驻114电子网 |
询价 | ||
MICRON/美光 |
22+ |
BGA |
3000 |
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、 |
询价 | ||
MICRON |
2017+ |
BGA |
54896 |
深圳代理原装现货进口库存(香港-日本-台湾)开17点增票 |
询价 | ||
MICON |
2020+ |
BGA |
742 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
询价 | ||
MICRON |
19+ |
BGA |
256800 |
原厂代理渠道,每一颗芯片都可追溯原厂； |
询价 | ||
MICON |
23+ |
BGA |
8560 |
受权代理!全新原装现货特价热卖! |
询价 | ||
23+ |
N/A |
49100 |
正品授权货源可靠 |
询价 | |||
MICRON |
23+ |
BGA |
20000 |
原厂原装正品现货 |
询价 | ||
MICRON |
20+ |
FBGA |
90000 |
原装正品现货/价格优势 |
询价 | ||
MICRON |
2023+ |
BGA |
80000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
询价 |
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