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首页>MT47H512M4THN-3:E>芯片详情
MT47H512M4THN-3:E 集成电路（IC）存储器 MICRON/美光
- 详细信息
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产品参考属性
- 类型
描述
- 产品编号：
MT47H512M4THN-3
- 制造商：
Micron Technology Inc.
- 类别：
- 包装：
托盘
- 存储器类型：
易失
- 存储器格式：
DRAM
- 技术：
SDRAM - DDR2
- 存储容量：
2Gb（512M x 4）
- 存储器接口：
并联
- 写周期时间 - 字，页：
15ns
- 电压 - 供电：
1.7V ~ 1.9V
- 工作温度：
0°C ~ 85°C（TC）
- 安装类型：
表面贴装型
- 封装/外壳：
63-TFBGA
- 供应商器件封装：
63-FBGA（8x10）
- 描述：
IC DRAM 2GBIT PARALLEL 63FBGA
供应商
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