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MT47H128M8HQ-3 L:G

包装:卷带(TR) 封装/外壳:60-FBGA 类别:集成电路(IC) 存储器 描述:IC DRAM 1GBIT PARALLEL 60FBGA

MicronMicron Technology Inc.

镁光美国镁光科技有限公司

MT47H128M8HQ-3 L:G TR

包装:卷带(TR) 封装/外壳:60-FBGA 类别:集成电路(IC) 存储器 描述:IC DRAM 1GBIT PARALLEL 60FBGA

MicronMicron Technology Inc.

镁光美国镁光科技有限公司

MT47H128M8HQ-3AT

DDR2SDRAM

DDR2SDRAM MT47H256M4–32Megx4x8banks MT47H128M8–16Megx8x8banks MT47H64M16–8Megx16x8banks Features •VDD=1.8V±0.1V,VDDQ=1.8V±0.1V •JEDEC-standard1.8VI/O(SSTL_18-compatible) •Differentialdatastrobe(DQS,DQS#)option •4n-bitprefetcharchitecture •Dup

MicronMicron Technology Inc.

镁光美国镁光科技有限公司

MT47H128M8HQ-3EAT

DDR2SDRAM

DDR2SDRAM MT47H256M4–32Megx4x8banks MT47H128M8–16Megx8x8banks MT47H64M16–8Megx16x8banks Features •VDD=1.8V±0.1V,VDDQ=1.8V±0.1V •JEDEC-standard1.8VI/O(SSTL_18-compatible) •Differentialdatastrobe(DQS,DQS#)option •4n-bitprefetcharchitecture •Dup

MicronMicron Technology Inc.

镁光美国镁光科技有限公司

MT47H128M8HQ-3EIT

DDR2SDRAM

DDR2SDRAM MT47H256M4–32Megx4x8banks MT47H128M8–16Megx8x8banks MT47H64M16–8Megx16x8banks Features •VDD=1.8V±0.1V,VDDQ=1.8V±0.1V •JEDEC-standard1.8VI/O(SSTL_18-compatible) •Differentialdatastrobe(DQS,DQS#)option •4n-bitprefetcharchitecture •Dup

MicronMicron Technology Inc.

镁光美国镁光科技有限公司

MT47H128M8HQ-3EL

DDR2SDRAM

DDR2SDRAM MT47H256M4–32Megx4x8banks MT47H128M8–16Megx8x8banks MT47H64M16–8Megx16x8banks Features •VDD=1.8V±0.1V,VDDQ=1.8V±0.1V •JEDEC-standard1.8VI/O(SSTL_18-compatible) •Differentialdatastrobe(DQS,DQS#)option •4n-bitprefetcharchitecture •Dup

MicronMicron Technology Inc.

镁光美国镁光科技有限公司

MT47H128M8HQ-3IT

DDR2SDRAM

DDR2SDRAM MT47H256M4–32Megx4x8banks MT47H128M8–16Megx8x8banks MT47H64M16–8Megx16x8banks Features •VDD=1.8V±0.1V,VDDQ=1.8V±0.1V •JEDEC-standard1.8VI/O(SSTL_18-compatible) •Differentialdatastrobe(DQS,DQS#)option •4n-bitprefetcharchitecture •Dup

MicronMicron Technology Inc.

镁光美国镁光科技有限公司

MT47H128M8HQ-3L

DDR2SDRAM

DDR2SDRAM MT47H256M4–32Megx4x8banks MT47H128M8–16Megx8x8banks MT47H64M16–8Megx16x8banks Features •VDD=1.8V±0.1V,VDDQ=1.8V±0.1V •JEDEC-standard1.8VI/O(SSTL_18-compatible) •Differentialdatastrobe(DQS,DQS#)option •4n-bitprefetcharchitecture •Dup

MicronMicron Technology Inc.

镁光美国镁光科技有限公司

产品属性

  • 产品编号:

    MT47H128M8HQ-3 L

  • 制造商:

    Micron Technology Inc.

  • 类别:

    集成电路(IC) > 存储器

  • 包装:

    卷带(TR)

  • 存储器类型:

    易失

  • 存储器格式:

    DRAM

  • 技术:

    SDRAM - DDR2

  • 存储容量:

    1Gb(128M x 8)

  • 存储器接口:

    并联

  • 写周期时间 - 字,页:

    15ns

  • 电压 - 供电:

    1.7V ~ 1.9V

  • 工作温度:

    0°C ~ 85°C(TC)

  • 安装类型:

    表面贴装型

  • 封装/外壳:

    60-FBGA

  • 供应商器件封装:

    60-FBGA(8x11.5)

  • 描述:

    IC DRAM 1GBIT PARALLEL 60FBGA

供应商型号品牌批号封装库存备注价格
MICRON
22+
FBGA60
2500
强调现货,随时查询!
询价
MIC
760
询价
MICRON
23+
BGA
5000
原装正品,假一罚十
询价
Mlcron
2018+
FBGA60
6528
科恒伟业!承若只做进口原装正品假一赔十!1581728776
询价
MICRON
19+
BGA
256800
原厂代理渠道,每一颗芯片都可追溯原厂;
询价
MICRON
2021+
BGA
6717
原装正品假一罚十
询价
MICRON
23+
FBGA
8560
受权代理!全新原装现货特价热卖!
询价
MICRONTEC
23+
NA
1080
专做原装正品,假一罚百!
询价
MT
21+
BGA
12588
全新原装深圳现货
询价
23+
N/A
38160
正品授权货源可靠
询价
更多MT47H128M8HQ-3 L:G供应商 更新时间2024-5-22 16:21:00