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MT47H128M8	文件：9.27235 Mbytes Page：131 Pages	DDR2 SDRAM DDR2SDRAM MT47H256M4–32Megx4x8banks MT47H128M8–16Megx8x8banks MT47H64M16–8Megx16x8banks Features •VDD=1.8V±0.1V,VDDQ=1.8V±0.1V •JEDEC-standard1.8VI/O(SSTL_18-compatible) •Differentialdatastrobe(DQS,DQS#)option •4n-bitprefetcharchitecture •Dup	MicronMicron Technology Inc. 镁光美国镁光科技有限公司	Micron
MT47H128M8	文件：9.29855 Mbytes Page：134 Pages	DDR2 SDRAM MT47H256M4 ??32 Meg x 4 x 8 banks MT47H128M8 ??16 Meg x 8 x 8 banks MT47H64M16 ??8 Meg x 16 x 8 banks DDR2SDRAM MT47H256M4–32Megx4x8banks MT47H128M8–16Megx8x8banks MT47H64M16–8Megx16x8banks Features •VDD=1.8V±0.1V,VDDQ=1.8V±0.1V •JEDEC-standard1.8VI/O(SSTL_18-compatible) •Differentialdatastrobe(DQS,DQS#)option •4n-bitprefetcharchitecture •Dup	MicronMicron Technology Inc. 镁光美国镁光科技有限公司	Micron
MT47H128M8CF-187EAT	文件：9.27235 Mbytes Page：131 Pages	DDR2 SDRAM DDR2SDRAM MT47H256M4–32Megx4x8banks MT47H128M8–16Megx8x8banks MT47H64M16–8Megx16x8banks Features •VDD=1.8V±0.1V,VDDQ=1.8V±0.1V •JEDEC-standard1.8VI/O(SSTL_18-compatible) •Differentialdatastrobe(DQS,DQS#)option •4n-bitprefetcharchitecture •Dup	MicronMicron Technology Inc. 镁光美国镁光科技有限公司	Micron
MT47H128M8CF-187EIT	文件：9.27235 Mbytes Page：131 Pages	DDR2 SDRAM DDR2SDRAM MT47H256M4–32Megx4x8banks MT47H128M8–16Megx8x8banks MT47H64M16–8Megx16x8banks Features •VDD=1.8V±0.1V,VDDQ=1.8V±0.1V •JEDEC-standard1.8VI/O(SSTL_18-compatible) •Differentialdatastrobe(DQS,DQS#)option •4n-bitprefetcharchitecture •Dup	MicronMicron Technology Inc. 镁光美国镁光科技有限公司	Micron
MT47H128M8CF-187EL	文件：9.27235 Mbytes Page：131 Pages	DDR2 SDRAM DDR2SDRAM MT47H256M4–32Megx4x8banks MT47H128M8–16Megx8x8banks MT47H64M16–8Megx16x8banks Features •VDD=1.8V±0.1V,VDDQ=1.8V±0.1V •JEDEC-standard1.8VI/O(SSTL_18-compatible) •Differentialdatastrobe(DQS,DQS#)option •4n-bitprefetcharchitecture •Dup	MicronMicron Technology Inc. 镁光美国镁光科技有限公司	Micron
MT47H128M8CF-25AT	文件：9.27235 Mbytes Page：131 Pages	DDR2 SDRAM DDR2SDRAM MT47H256M4–32Megx4x8banks MT47H128M8–16Megx8x8banks MT47H64M16–8Megx16x8banks Features •VDD=1.8V±0.1V,VDDQ=1.8V±0.1V •JEDEC-standard1.8VI/O(SSTL_18-compatible) •Differentialdatastrobe(DQS,DQS#)option •4n-bitprefetcharchitecture •Dup	MicronMicron Technology Inc. 镁光美国镁光科技有限公司	Micron
MT47H128M8CF-25EAT	文件：9.27235 Mbytes Page：131 Pages	DDR2 SDRAM DDR2SDRAM MT47H256M4–32Megx4x8banks MT47H128M8–16Megx8x8banks MT47H64M16–8Megx16x8banks Features •VDD=1.8V±0.1V,VDDQ=1.8V±0.1V •JEDEC-standard1.8VI/O(SSTL_18-compatible) •Differentialdatastrobe(DQS,DQS#)option •4n-bitprefetcharchitecture •Dup	MicronMicron Technology Inc. 镁光美国镁光科技有限公司	Micron
MT47H128M8CF-25EIT	文件：9.27235 Mbytes Page：131 Pages	DDR2 SDRAM DDR2SDRAM MT47H256M4–32Megx4x8banks MT47H128M8–16Megx8x8banks MT47H64M16–8Megx16x8banks Features •VDD=1.8V±0.1V,VDDQ=1.8V±0.1V •JEDEC-standard1.8VI/O(SSTL_18-compatible) •Differentialdatastrobe(DQS,DQS#)option •4n-bitprefetcharchitecture •Dup	MicronMicron Technology Inc. 镁光美国镁光科技有限公司	Micron
MT47H128M8CF-25EL	文件：9.27235 Mbytes Page：131 Pages	DDR2 SDRAM DDR2SDRAM MT47H256M4–32Megx4x8banks MT47H128M8–16Megx8x8banks MT47H64M16–8Megx16x8banks Features •VDD=1.8V±0.1V,VDDQ=1.8V±0.1V •JEDEC-standard1.8VI/O(SSTL_18-compatible) •Differentialdatastrobe(DQS,DQS#)option •4n-bitprefetcharchitecture •Dup	MicronMicron Technology Inc. 镁光美国镁光科技有限公司	Micron
MT47H128M8CF-25IT	文件：9.27235 Mbytes Page：131 Pages	DDR2 SDRAM DDR2SDRAM MT47H256M4–32Megx4x8banks MT47H128M8–16Megx8x8banks MT47H64M16–8Megx16x8banks Features •VDD=1.8V±0.1V,VDDQ=1.8V±0.1V •JEDEC-standard1.8VI/O(SSTL_18-compatible) •Differentialdatastrobe(DQS,DQS#)option •4n-bitprefetcharchitecture •Dup	MicronMicron Technology Inc. 镁光美国镁光科技有限公司	Micron
MT47H128M8CF-25L	文件：9.27235 Mbytes Page：131 Pages	DDR2 SDRAM DDR2SDRAM MT47H256M4–32Megx4x8banks MT47H128M8–16Megx8x8banks MT47H64M16–8Megx16x8banks Features •VDD=1.8V±0.1V,VDDQ=1.8V±0.1V •JEDEC-standard1.8VI/O(SSTL_18-compatible) •Differentialdatastrobe(DQS,DQS#)option •4n-bitprefetcharchitecture •Dup	MicronMicron Technology Inc. 镁光美国镁光科技有限公司	Micron
MT47H128M8CF-37EAT	文件：9.27235 Mbytes Page：131 Pages	DDR2 SDRAM DDR2SDRAM MT47H256M4–32Megx4x8banks MT47H128M8–16Megx8x8banks MT47H64M16–8Megx16x8banks Features •VDD=1.8V±0.1V,VDDQ=1.8V±0.1V •JEDEC-standard1.8VI/O(SSTL_18-compatible) •Differentialdatastrobe(DQS,DQS#)option •4n-bitprefetcharchitecture •Dup	MicronMicron Technology Inc. 镁光美国镁光科技有限公司	Micron
MT47H128M8CF-37EIT	文件：9.27235 Mbytes Page：131 Pages	DDR2 SDRAM DDR2SDRAM MT47H256M4–32Megx4x8banks MT47H128M8–16Megx8x8banks MT47H64M16–8Megx16x8banks Features •VDD=1.8V±0.1V,VDDQ=1.8V±0.1V •JEDEC-standard1.8VI/O(SSTL_18-compatible) •Differentialdatastrobe(DQS,DQS#)option •4n-bitprefetcharchitecture •Dup	MicronMicron Technology Inc. 镁光美国镁光科技有限公司	Micron
MT47H128M8CF-37EL	文件：9.27235 Mbytes Page：131 Pages	DDR2 SDRAM DDR2SDRAM MT47H256M4–32Megx4x8banks MT47H128M8–16Megx8x8banks MT47H64M16–8Megx16x8banks Features •VDD=1.8V±0.1V,VDDQ=1.8V±0.1V •JEDEC-standard1.8VI/O(SSTL_18-compatible) •Differentialdatastrobe(DQS,DQS#)option •4n-bitprefetcharchitecture •Dup	MicronMicron Technology Inc. 镁光美国镁光科技有限公司	Micron
MT47H128M8CF-3AT	文件：9.27235 Mbytes Page：131 Pages	DDR2 SDRAM DDR2SDRAM MT47H256M4–32Megx4x8banks MT47H128M8–16Megx8x8banks MT47H64M16–8Megx16x8banks Features •VDD=1.8V±0.1V,VDDQ=1.8V±0.1V •JEDEC-standard1.8VI/O(SSTL_18-compatible) •Differentialdatastrobe(DQS,DQS#)option •4n-bitprefetcharchitecture •Dup	MicronMicron Technology Inc. 镁光美国镁光科技有限公司	Micron
MT47H128M8CF-3EAT	文件：9.27235 Mbytes Page：131 Pages	DDR2 SDRAM DDR2SDRAM MT47H256M4–32Megx4x8banks MT47H128M8–16Megx8x8banks MT47H64M16–8Megx16x8banks Features •VDD=1.8V±0.1V,VDDQ=1.8V±0.1V •JEDEC-standard1.8VI/O(SSTL_18-compatible) •Differentialdatastrobe(DQS,DQS#)option •4n-bitprefetcharchitecture •Dup	MicronMicron Technology Inc. 镁光美国镁光科技有限公司	Micron
MT47H128M8CF-3EIT	文件：9.27235 Mbytes Page：131 Pages	DDR2 SDRAM DDR2SDRAM MT47H256M4–32Megx4x8banks MT47H128M8–16Megx8x8banks MT47H64M16–8Megx16x8banks Features •VDD=1.8V±0.1V,VDDQ=1.8V±0.1V •JEDEC-standard1.8VI/O(SSTL_18-compatible) •Differentialdatastrobe(DQS,DQS#)option •4n-bitprefetcharchitecture •Dup	MicronMicron Technology Inc. 镁光美国镁光科技有限公司	Micron
MT47H128M8CF-3EL	文件：9.27235 Mbytes Page：131 Pages	DDR2 SDRAM DDR2SDRAM MT47H256M4–32Megx4x8banks MT47H128M8–16Megx8x8banks MT47H64M16–8Megx16x8banks Features •VDD=1.8V±0.1V,VDDQ=1.8V±0.1V •JEDEC-standard1.8VI/O(SSTL_18-compatible) •Differentialdatastrobe(DQS,DQS#)option •4n-bitprefetcharchitecture •Dup	MicronMicron Technology Inc. 镁光美国镁光科技有限公司	Micron
MT47H128M8CF-3IT	文件：9.27235 Mbytes Page：131 Pages	DDR2 SDRAM DDR2SDRAM MT47H256M4–32Megx4x8banks MT47H128M8–16Megx8x8banks MT47H64M16–8Megx16x8banks Features •VDD=1.8V±0.1V,VDDQ=1.8V±0.1V •JEDEC-standard1.8VI/O(SSTL_18-compatible) •Differentialdatastrobe(DQS,DQS#)option •4n-bitprefetcharchitecture •Dup	MicronMicron Technology Inc. 镁光美国镁光科技有限公司	Micron
MT47H128M8CF-3L	文件：9.27235 Mbytes Page：131 Pages	DDR2 SDRAM DDR2SDRAM MT47H256M4–32Megx4x8banks MT47H128M8–16Megx8x8banks MT47H64M16–8Megx16x8banks Features •VDD=1.8V±0.1V,VDDQ=1.8V±0.1V •JEDEC-standard1.8VI/O(SSTL_18-compatible) •Differentialdatastrobe(DQS,DQS#)option •4n-bitprefetcharchitecture •Dup	MicronMicron Technology Inc. 镁光美国镁光科技有限公司	Micron

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详细参数

型号：
MT47H128
功能描述：
IC DDR2 SDRAM 1GBIT 92FBGA
RoHS：
是
类别：
集成电路(IC) >> 存储器
系列：
-
标准包装：
1,000
系列：
- 格式 -
存储器：
RAM
存储器类型：
移动 SDRAM
存储容量：
256M（8Mx32）
速度：
133MHz
接口：
并联
电源电压：
1.7 V ~ 1.95 V
工作温度：
-40°C ~ 85°C
封装/外壳：
90-VFBGA
供应商设备封装：
90-VFBGA（8x13）
包装：
带卷(TR)
其它名称：
557-1327-2

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市向鸿伟业电子有限公司	MT47H128M8CF-25E:H	MICRON	13+	BGA	3		询价
深圳市星佑电子有限公司	MT47H128M8CF-3IT:H	MICRON镁光	2010+	BGA	2150	一定是全新原厂原装现货DDR系列	询价
深圳市福安瓯科技有限公司	MT47H128M8HQ-3:E	MICRON	22+	FBGA60	2500	强调现货,随时查询!	询价
深圳市粤科源兴科技有限公司	MT47H128M8CF-25:HD9LHP	MICRON	10+	BGA	10		询价
深圳市益百分电子有限公司	MT47H128M8BT-37E	MICRON	06+	TSOP48	2600	全新原装进口自己库存优势	询价
深圳市特顺芯科技有限公司	MT47H128M8HQ-3:E	MIC			760		询价
鑫勃源（上海北京青岛）有限公司	MT47H128M8CF-25EIT:H	MICRON	23+	BGA	7889		询价
深圳市恒创达实业有限公司	MT47H128M8CF-25E:H	MICRON	17+	器件和集成	6200	100%原装正品现货	询价
深圳好佳好科技有限公司	MT47H128M8CF-3IT:H	MI9	1342+	DDR2SDRAM1G-BIT1.8V	8626	绝对原装优势	询价
深圳市昌源伟业科技有限公司	MT47H128M8CF-3IT:H	MICRON	14+	BGA	5330	现货原装库存热卖	询价

更多MT47H128供应商更新时间2024-4-29 16:12:00

详细参数

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