Mobile Low-Power DDR SDRAM

Features

• VDD/VDDQ = 1.70–1.95V

• Bidirectional data strobe per byte of data (DQS)

• Internal, pipelined double data rate (DDR) architecture; two data accesses per clock cycle

• Differential clock inputs (CK and CK#)

• Commands entered on each positive CK edge

• DQS edge-aligned with data for READs; center aligned with data for WRITEs

• 4 internal banks for concurrent operation

• Data masks (DM) for masking write data; one mask per byte

• Programmable burst lengths (BL): 2, 4, 8, or 16

• Concurrent auto precharge option is supported

• Auto refresh and self refresh modes

• 1.8V LVCMOS-compatible inputs

• Temperature-compensated self refresh (TCSR)

• Partial-array self refresh (PASR)

• Deep power-down (DPD)

• Status read register (SRR)

• Selectable output drive strength (DS)

• Clock stop capability

• 64ms refresh, 32ms for automotive temperature

MT46H16M32LF属于集成电路（IC） > 存储器。美国镁光科技有限公司制造生产的MT46H16M32LF存储器存储器是集成电路上用作数据存储设备的半导体器件。这些器件分为非易失性或易失性两种，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、闪存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。这些器件的存储容量为 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、单线、SPI、UFS、Xccela 总线和 1-线。