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MT28F002B3中文资料2Mb SMART 3 BOOT BLOCK FLASH MEMORY数据手册Micron规格书

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厂商型号

MT28F002B3

功能描述

2Mb SMART 3 BOOT BLOCK FLASH MEMORY

制造商

Micron Micron Technology

中文名称

美光 美光科技有限公司

数据手册

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更新时间

2025-9-23 22:59:00

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MT28F002B3规格书详情

描述 Description

GENERAL DESCRIPTION
The MT28F002B3 (x8) and MT28F200B3 (x16/x8) are nonvolatile, electrically block-erasable (flash), programmable, read-only memories containing 2,097,152 bits organized as 131,072 words (16 bits) or 262,144 bytes (8 bits). Writing or erasing the device is done with either a 3.3V or 5V VPP voltage, while all operations are performed with a 3.3V VCC. Due to process technology advances, 5V VPP is optimal for application and production programming. For backward compatibility with SmartVoltage technology, 12V VPP is supported for a maximum of 100 cycles and may be connected for up to 100 cumulative hours. These devices are fabricated with Micron’s advanced CMOS floating-gate process.FEATURES
• Five erase blocks:
   16KB/8K-word boot block (protected)
   Two 8KB/4K-word parameter blocks
   Two main memory blocks
• Smart 3 technology (B3):
   3.3V ±0.3V VCC
   3.3V ±0.3V VPP application programming
   5V ±10% VPP application/production programming
   12V ±5% VPP compatibility production programming
• Address access times: 90ns, 100ns
• 100,000 ERASE cycles
• Industry-standard pinouts
• Inputs and outputs are fully TTL-compatible
• Automated write and erase algorithm
• Two-cycle WRITE/ERASE sequence
• Byte- or word-wide READ and WRITE
   (MT28F200B3, 128K x 16/256K x 8)
• Byte-wide READ and WRITE only
   (MT28F002B3, 256K x 8)
• TSOP and SOP packaging options

特性 Features

• Five erase blocks:
   16KB/8K-word boot block (protected)
   Two 8KB/4K-word parameter blocks
   Two main memory blocks
• Smart 3 technology (B3):
   3.3V ±0.3V VCC
   3.3V ±0.3V VPP application programming
   5V ±10% VPP application/production programming
   12V ±5% VPP compatibility production programming
• Address access times: 90ns, 100ns
• 100,000 ERASE cycles
• Industry-standard pinouts
• Inputs and outputs are fully TTL-compatible
• Automated write and erase algorithm
• Two-cycle WRITE/ERASE sequence
• Byte- or word-wide READ and WRITE
   (MT28F200B3, 128K x 16/256K x 8)
• Byte-wide READ and WRITE only
   (MT28F002B3, 256K x 8)
• TSOP and SOP packaging options 

技术参数

  • 型号:

    MT28F002B3

  • 制造商:

    MICRON

  • 制造商全称:

    Micron Technology

  • 功能描述:

    FLASH MEMORY

供应商 型号 品牌 批号 封装 库存 备注 价格
MRON/美光
24+
NA/
4542
原装现货,当天可交货,原型号开票
询价
MT
22+
TSSOP
3000
原装正品,支持实单
询价
Micron
1
公司优势库存 热卖中!!
询价
MICRON/美光
2223+
TSOP40
26800
只做原装正品假一赔十为客户做到零风险
询价
MICRON
20+
TSSOP40
2960
诚信交易大量库存现货
询价
MICRON/美光
2402+
TSOP40
8324
原装正品!实单价优!
询价
MICRON
15
全新原装 货期两周
询价
MICRON
00+
TSOP40
10470
询价
MICRON
原厂封装
9800
原装进口公司现货假一赔百
询价
MICRON
24+
TSSOP
1302
询价