FLASH MEMORY

GENERAL DESCRIPTION The MT28F002B3 (x8) and MT28F200B3 (x16/x8) are nonvolatile, electrically block-erasable (flash), programmable, read-only memories containing 2,097,152 bits organized as 131,072 words (16 bits) or 262,144 bytes (8 bits). Writing or erasing the device is done with either a 3.3V

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Micron

美光

2Mb SMART 3 BOOT BLOCK FLASH MEMORY

GENERAL DESCRIPTION\nThe MT28F002B3 (x8) and MT28F200B3 (x16/x8) are nonvolatile, electrically block-erasable (flash), programmable, read-only memories containing 2,097,152 bits organized as 131,072 words (16 bits) or 262,144 bytes (8 bits). Writing or erasing the device is done with either a 3.3V o • Five erase blocks:\n   16KB/8K-word boot block (protected)\n   Two 8KB/4K-word parameter blocks\n   Two main memory blocks\n• Smart 3 technology (B3):\n   3.3V ±0.3V VCC\n   3.3V ±0.3V VPP application programming\n   5V ±10% VPP application/production programming\n   12V ±5% VPP compatibil;

Micron

美光

SOP-44

Micron

美光

上传：深圳市恒达亿科技有限公司

TSOP48

MICRON/美光

上传：深圳庞田科技有限公司

LBGA-64

Micron/镁光

上传：深圳市兴灿科技有限公司