Rad Hard NPN Silicon Switching Transistor Screened per MIL-PRF-19500 & ESCC 22900

DESCRIPTION This RHA level high speed switching NPN transistor, 2N2222A in a UB or UBC ceramic package, is ideal to drive many high-reliability applications. This device is constructed and screened to a JANSR performance level with radiation test method 1019 wafer lot acceptance conducted on a

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Microsemi

美高森美

NPN Silicon Switching 50V, 0.8A

This specification covers the performance requirements for NPN, silicon, switching 2N2221 and 2N2222 transistors. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each encapsulated device type as specified in MIL-PRF-19500/255 and two levels of product assurance (JANHC The device packages for the encapsulated device types are as follows: 2N2221A and 2N2222A (TO-18, UA, UB, UBC, UBN, and UBCN). \nThe dimensions and topography for JANHC and JANKC unencapsulated die are as outlined in MIL-PRF-19500/255.;

Microchip

微芯科技

Package：3-SMD，无引线；包装：散装 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：RH SMALL-SIGNAL BJT

Microchip

微芯科技

NPN Silicon Switching 50V, 0.8A

This specification covers the performance requirements for NPN, silicon, switching 2N2221 and 2N2222 transistors. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each encapsulated device type as specified in MIL-PRF-19500/255 and two levels of product assurance (JANHC The device packages for the encapsulated device types are as follows: 2N2221A and 2N2222A (TO-18, UA, UB, UBC, UBN, and UBCN). \nThe dimensions and topography for JANHC and JANKC unencapsulated die are as outlined in MIL-PRF-19500/255.;

Microchip

微芯科技

Package：3-SMD，无引线；包装：散装 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：RH SMALL-SIGNAL BJT

Microchip

微芯科技

Package：3-SMD，无引线；包装：散装 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：SMALL-SIGNAL BJT

Microchip

微芯科技