DESCRIPTION

The MSM56V16800E is a 2-bank x 1,048,576-word x 8-bit synchronous dynamic RAM, fabricated in Okis CMOS silicon-gate process technology. The device operates at 3.3 V. The inputs and outputs are LVTTL compatible.

FEATURES

• Silicon gate, quadruple polysilicon CMOS, 1-transistor memory cell

• 2-bank x 1,048,576-word x 8-bit configuration

• 3.3 V power supply, ±0.3 V tolerance

• Input : LVTTL compatible

• Output : LVTTL compatible

• Refresh : 4096 cycles/64 ms

• Programmable data transfer mode

– CAS latency (1, 2, 3)

– Burst length (1, 2, 4, 8, full page)

– Data scramble (sequential, interleave)

• CBR auto-refresh, Self-refresh capability

• Package:

44-pin 400 mil plastic TSOP (Type II) (TSOPII44-P-400-0.80-K) (Product : MSM56V16800E-xxTS-K)

xx indicates speed rank.