MSM56V16160D中文资料冲电线数据手册PDF规格书

DESCRIPTION

The MSM56V16160D/DH is a 2-bank x 524,288-word x 16-bit synchronous dynamic RAM, fabricated in Okis CMOS silicon-gate process technology. The device operates at 3.3 V. The inputs and outputs are LVTTL compatible.

FEATURES

• Silicon gate, quadruple polysilicon CMOS, 1-transistor memory cell

• 2-bank x 524,288-word x 16-bit configuration

• 3.3 V power supply, ±0.3 V tolerance

• Input : LVTTL compatible

• Output : LVTTL compatible

• Refresh : 4096 cycles/64 ms

• Programmable data transfer mode

– CAS latency (1, 2, 3)

– CAS latency (2, 3)*1

– Burst length (1, 2, 4, 8, full page)

– Burst length (1, 2, 4, 8)*1

– Data scramble (sequential, interleave)

*1 : H version only.

• CBR auto-refresh, Self-refresh capability

• Package:

50-pin 400 mil plastic TSOP (Type II) (TSOPII50-P-400-0.80-K) (Product : MSM56V16160D/DH-xxTS-K)

xx indicates speed rank.