262,144-Word X 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO

DESCRIPTION The MSM514265E/ESL is a 262,144-word ×16-bit dynamic RAM fabricated in Oki’s silicon-gate CMOS technology. The MSM514265E/ESL achieves high integration, high-speed operation, and low-powerconsumption because Oki manufactures the device in a quadruple-layer polysilicon/double-layer met

文件：206.36 Kbytes 页数：15 Pages

OKIOki Electric Cable Co.,Ltd

冲电线日本冲电线株式会社

262,144-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO

DESCRIPTION\nThe MSM514265E/ESL is a 262,144-word ×16-bit dynamic RAM fabricated in Oki’s silicon-gate CMOS\ntechnology. The MSM514265E/ESL achieves high integration, high-speed operation, and low-power\nconsumption because Oki manufactures the device in a quadruple-layer polysilicon/double-layer me • 262,144-word ×16-bit configuration\n• Single 5V power supply, ±10%tolerance\n• Input : TTL compatible, low input capacitance\n• Output : TTL compatible, 3-state\n• Refresh : 512 cycles/8ms, 512 cycles/128 ms (SL version)\n• Fast page mode with EDO, read modify write capability\n• CASbefore RAS;

OKI

冲电线

262,144-Word X 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO

DESCRIPTION The MSM514265E/ESL is a 262,144-word ×16-bit dynamic RAM fabricated in Oki’s silicon-gate CMOS technology. The MSM514265E/ESL achieves high integration, high-speed operation, and low-powerconsumption because Oki manufactures the device in a quadruple-layer polysilicon/double-layer met

文件：206.36 Kbytes 页数：15 Pages

OKIOki Electric Cable Co.,Ltd

冲电线日本冲电线株式会社

BGA

QUALCOMM/高通

上传：深圳市卓越微芯电子有限公司

BGA

QUALCOMM

高通

上传：深圳市勤思达科技有限公司