| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
N-Channel60V(D-S)MOSFET | VishayVishay Siliconix 威世科技 | Vishay | ||
N-Channel60V(D-S)MOSFET | VishayVishay Siliconix 威世科技 | Vishay | ||
DC-4.0GHz,3.5Volt50OhmLNAMMICAmplifier ProductDescription StanfordMicrodevices’SLN-186isahighperformancegalliumarsenideheterojunctionbipolartransistorMMIChousedinalow-costsurfacemountplasticpackage.ADarlingtonconfigurationisusedforbroadbandperformancefromDC-4.0GHz. ProductFeatures •Patented,Reliabl | STANFORDStanford Microdevices Stanford Microdevices | STANFORD | ||
TRISILTM DESCRIPTION TheSMTPBxxserieshasbeendesignedtoprotecttelecommunicationequipmentagainstlightningandtransientinducedbyACpowerlines. FEATURES BIDIRECTIONALCROWBARPROTECTION. BREAKDOWNVOLTAGERANGE:From62VTo270V. HOLDINGCURRENT:IH=150mAmin REPETITIVEPE | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
DC-8GHz,CascadableGaAsHBTMMICAmplifier ProductDescription SirenzaMicrodevices’SNA-186isaGaAsmonolithicbroadbandamplifier(MMIC)housedinalow-costsurface-mountableplasticpackage.Thisamplifierprovides12dBofgainand+13dBmofP1dBpowerwhenbiasedat4Vand50mA. ProductFeatures •Patented,ReliableGaAsHBTTech | SIRENZASIRENZA 圆通微波上海圆通微波电子有限公司 | SIRENZA | ||
Thisdocumentdescribestheknownexceptionstothefunctionalspecificationsforthedevice. | TI1Texas Instruments(TI) 德州仪器德州仪器 (TI) | TI1 | ||
AutomotiveN-Channel80V(D-S)175°CMOSFET FEATURES •TrenchFET®GenIVpowerMOSFET •AEC-Q101qualified •100RgandUIStested •Materialcategorization: fordefinitionsofcompliancepleasesee www.vishay.com/doc?99912 | VishayVishay Siliconix 威世科技 | Vishay | ||
AutomotiveN-Channel80V(D-S)175째CMOSFET FEATURES •TrenchFET®GenIVpowerMOSFET •AEC-Q101qualified •100RgandUIStested •Materialcategorization: fordefinitionsofcompliancepleasesee www.vishay.com/doc?99912 | VishayVishay Siliconix 威世科技 | Vishay | ||
AutomotiveN-Channel80V(D-S)175°CMOSFET FEATURES •TrenchFET®powerMOSFET •AEC-Q101qualified •100RgandUIStested •Materialcategorization: fordefinitionsofcompliancepleasesee www.vishay.com/doc?99912 | VishayVishay Siliconix 威世科技 | Vishay | ||
AutomotiveN-Channel80V(D-S)175째CMOSFET | VishayVishay Siliconix 威世科技 | Vishay | ||
AutomotiveN-Channel80V(D-S)175째CMOSFET FEATURES •TrenchFET®powerMOSFET •AEC-Q101qualified •100RgandUIStested •Materialcategorization: fordefinitionsofcompliancepleasesee www.vishay.com/doc?99912 | VishayVishay Siliconix 威世科技 | Vishay | ||
AutomotiveN-Channel80V(D-S)175째CMOSFET FEATURES •TrenchFET®GenIVpowerMOSFET •AEC-Q101qualified •100RgandUIStested •Thin1.9mmheight •Materialcategorization fordefinitionsofcompliancepleasesee www.vishay.com/doc?99912 | VishayVishay Siliconix 威世科技 | Vishay | ||
AutomotiveN-Channel80V(D-S)175°CMOSFET FEATURES •TrenchFET®GenIVpowerMOSFET •AEC-Q101qualified •100RgandUIStested •Thin1.9mmheight •Materialcategorization fordefinitionsofcompliancepleasesee www.vishay.com/doc?99912 | VishayVishay Siliconix 威世科技 | Vishay | ||
AutomotiveN-Channel80V(D-S)175°CMOSFET FEATURES •TrenchFET®GenIVpowerMOSFET •AEC-Q101qualified •100RgandUIStested •Thin1.6mmpackage •Verylowthermalresistance •Materialcategorization: fordefinitionsofcompliancepleasesee www.vishay.com/doc?99912 | VishayVishay Siliconix 威世科技 | Vishay | ||
AutomotiveN-Channel80V(D-S)175째CMOSFET FEATURES •TrenchFET®GenIVpowerMOSFET •AEC-Q101qualified •100RgandUIStested •Thin1.6mmpackage •Verylowthermalresistance •Materialcategorization: fordefinitionsofcompliancepleasesee www.vishay.com/doc?99912 | VishayVishay Siliconix 威世科技 | Vishay | ||
PaperTrayDetectorSwitchesforPhotocopyMachines | SHINMEI Shinmei Electronic Co.,Ltd. | SHINMEI | ||
U-GAGET18USeriesSensor | BANNERBanner Engineering Corp. 邦纳电子邦纳电子（苏州）有限公司 | BANNER | ||
Ultrasonicsensoremitter | TURCKTURCK 上海乐利上海乐利自动化科技有限公司 | TURCK | ||
Filterspecification | Vectron VECTRON | Vectron | ||
HIGHENERGYSPARKGAPDEVICES DESCRIPTION CPClare’sTGLegacySeriesoftwoelectrodesparkgapsexcelinapplicationsthatrequiretheefficienttransferofhighvoltage,highenergypulsesandDCovervoltageprotectionformagnetrons,diodes,capacitors,etc.TheTGLegacySeriesalsoincludesthreeelectrodetriggeredsp | ClareClare Inc. Clare Inc. | Clare |
详细参数
- 型号：
MSK186HU
- 制造商：
MSK
- 制造商全称：
M.S. Kennedy Corporation
- 功能描述：
DUAL HIGH VOLTAGE/ VERY HIGH CURRENT OPERATIONAL AMPLIFIER
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MSK |
24+ |
N/A |
6800 |
原厂正规渠道保证进口原装正品、假一罚十价格合理 |
询价 | ||
MSK |
23+ |
66800 |
原装正品专营军工 |
询价 | |||
BRUCKEWEL |
23+ |
SOT-23 |
63000 |
原装正品现货 |
询价 | ||
MSKSEMI(美森科) |
23+ |
DFN8(5x6) |
6000 |
询价 | |||
Wima |
90 |
公司优势库存 热卖中!! |
询价 | ||||
MCC/美微科 |
19+ |
SMD |
45443 |
原装正品,不是原装免费送 |
询价 | ||
23+ |
N/A |
35700 |
正品授权货源可靠 |
询价 | |||
1937+ |
SOD882 |
7318 |
向鸿代理渠道,有现货常备料,优势料 |
询价 | |||
SXSEMI |
23+ |
SOD882 |
900000 |
原装进口特价 |
询价 | ||
MCC |
20+ |
SMD |
11520 |
特价全新原装公司现货 |
询价 |
相关规格书
更多- MSK186S
- MSK1900
- MSK1901B
- MSK1902
- MSK1902-2
- MSK1902-6
- MSK1902B-2
- MSK1902B-6
- MSK1902E-2
- MSK1902E-6
- MSK1903-0
- MSK1903-4
- MSK1903B-0
- MSK1903B-4
- MSK1903E-0
- MSK1903E-4
- MSK1911
- MSK1932
- MSK1932D-2
- MSK1932D-6
- MSK1932S-2
- MSK1932S-6
- MSK1932U-2
- MSK1932U-6
- MSK1933D-0
- MSK1933D-4
- MSK1933S-0
- MSK1933S-4
- MSK1933U-0
- MSK1933U-4
- MSK2541
- MSK3001
- MSK3003
- MSK3013
- MSK3015
- MSK3017
- MSK3020
- MSK3554
- MSK35W
- MSK4200B
- MSK4201
- MSK4202HRHD
- MSK4202HRHU
- MSK4202KRHS
- MSK4202RH
相关库存
更多- MSK186U
- MSK1901
- MSK1901E
- MSK1902-0
- MSK1902-4
- MSK1902B-0
- MSK1902B-4
- MSK1902E-0
- MSK1902E-4
- MSK1903
- MSK1903-2
- MSK1903-6
- MSK1903B-2
- MSK1903B-6
- MSK1903E-2
- MSK1903E-6
- MSK1922
- MSK1932D-0
- MSK1932D-4
- MSK1932S-0
- MSK1932S-4
- MSK1932U-0
- MSK1932U-4
- MSK1933
- MSK1933D-2
- MSK1933D-6
- MSK1933S-2
- MSK1933S-6
- MSK1933U-2
- MSK1933U-6
- MSK2541B
- MSK3002
- MSK3004
- MSK3014
- MSK3016
- MSK3018
- MSK35
- MSK3554B
- MSK4200
- MSK4200E
- MSK4201B
- MSK4202HRHS
- MSK4202KRHD
- MSK4202KRHU
- MSK4202RHD
