丝印：MSE；Package：DO-214AC；400W Transient Voltage Suppressor (TVS) protection device

Description and applications This device has the ability to clamp dangerous high voltage, short term transients such as produced by directed or radiated electrostatic discharge phenomena before entering sensitive component regions of a circuit design. Response time of clamping action is virtual

文件：489.87 Kbytes 页数：6 Pages

Microsemi

美高森美

Surface-Mount ESD Capability Rectifier

FEATURES • Very low profile - typical height of 0.65 mm • Ideal for automated placement • Oxide planar chip junction • Low forward voltage drop, low leakage current • ESD capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified • Material categorizati

文件：113.96 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世科技

Surface-Mount ESD Capability Rectifier

FEATURES • Very low profile - typical height of 0.65 mm • Ideal for automated placement • Oxide planar chip junction • Low forward voltage drop, low leakage current • ESD capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified • Material categorizati

文件：113.96 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世科技

Surface-Mount ESD Capability Rectifier

FEATURES • Very low profile - typical height of 0.65 mm • Ideal for automated placement • Oxide planar chip junction • Low forward voltage drop, low leakage current • ESD capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified • Material categorizati

文件：113.96 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世科技

Surface-Mount ESD Capability Rectifier

FEATURES • Very low profile - typical height of 0.65 mm • Ideal for automated placement • Oxide planar chip junction • Low forward voltage drop, low leakage current • ESD capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified • Material categorizati

文件：113.96 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世科技

Surface-Mount ESD Capability Rectifier

FEATURES • Very low profile - typical height of 0.65 mm • Ideal for automated placement • Oxide planar chip junction • Low forward voltage drop, low leakage current • ESD capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified • Material categorizati

文件：113.96 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世科技

ULTRA HIGH BRIGHTNESS RED LED LAMP

DESCRIPTION MSE18TA-X is an ultra high brightness output red GaAlAs LED lamp encapsulated in a dot point, 1.8mm diameter clear transparent lens. 6 brightness grouping is provided for customers selection.

文件：44.75 Kbytes 页数：1 Pages

MICRO-ELECTRONICS

ULTRA HIGH BRIGHTNESS RED LED LAMP

DESCRIPTION MSE18TA-X is an ultra high brightness output red GaAlAs LED lamp encapsulated in a dot point, 1.8mm diameter clear transparent lens. 6 brightness grouping is provided for customers selection.

文件：44.75 Kbytes 页数：1 Pages

MICRO-ELECTRONICS

ULTRA HIGH BRIGHTNESS RED LED LAMP

DESCRIPTION MSE18TA-X is an ultra high brightness output red GaAlAs LED lamp encapsulated in a dot point, 1.8mm diameter clear transparent lens. 6 brightness grouping is provided for customers selection.

文件：44.75 Kbytes 页数：1 Pages

MICRO-ELECTRONICS

ULTRA HIGH BRIGHTNESS RED LED LAMP

DESCRIPTION MSE18TA-X is an ultra high brightness output red GaAlAs LED lamp encapsulated in a dot point, 1.8mm diameter clear transparent lens. 6 brightness grouping is provided for customers selection.

文件：44.75 Kbytes 页数：1 Pages

MICRO-ELECTRONICS