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SI4410BDY

N-Channel30-V(D-S)MOSFET

FEATURES •TrenchFETPowerMOSFET •100RgTested APPLICATIONS •BatterySwitch •LoadSwitch

VishayVishay Siliconix

威世科技威世科技半导体

SI4410DY

SingleN-ChannelLogicLevelPowerTrenchMOSFET

GeneralDescription ThisN-ChannelLogicLevelMOSFETisproducedusingFairchildSemiconductor’sadvancedPowerTrenchprocessthathasbeenespeciallytailoredtominimizeon-stateresistanceandyetmaintainsuperiorswitchingperformance. Thisdeviceiswellsuitedforlowvoltageandbattery

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

SI4410DY

N-channelenhancementmodefield-effecttransistor

Description N-channelenhancementmodefield-effecttransistorinaplasticpackageusingTrenchMOS™1technology. Productavailability: Si4410DYinSOT96-1(SO8). Features ■Lowon-stateresistance ■Fastswitching ■TrenchMOS™technology. Applications ■DCtoDCconvertor

PhilipsPhilips Semiconductors

飞利浦荷兰皇家飞利浦

SI4410DY

N-Channel30-V(D-S)MOSFET

FEATURES   TrenchFETPowerMOSFET

VishayVishay Siliconix

威世科技威世科技半导体

SI4410DY

HEXFETPowerMOSFET

Description ThisN-channelHEXFET®PowerMOSFETisproducedusingInternationalRectifiersadvancedHEXFETpowerMOSFETtechnology.Thelowon-resistanceandlowgatechargeinherenttothistechnologymakethisdeviceidealforlowvoltageorbatterydrivenpowerconversionapplications TheSO-

IRF

International Rectifier

SI4410DY

N-ChannelMOSFET

■Features ●VDS(V)=30V ●ID=10A(VGS=10V) ●RDS(ON)

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

SI4410DY

N-channelTrenchMOSlogiclevelFET

1.1Generaldescription LogiclevelN-channelenhancementmodeField-EffectTransistor(FET)inaplastic packageusingTrenchMOStechnology.Thisproductisdesignedandqualifiedforusein computing,communications,consumerandindustrialapplicationsonly. 1.2Featuresandbenefits Low

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

SI4410DY-HF

N-ChannelMOSFET

■Features ●VDS(V)=30V ●ID=10A(VGS=10V) ●RDS(ON)

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

SI4410DYPBF

HEXFET짰PowerMOSFET

Description ThisN-channelHEXFET®PowerMOSFETisproducedusingInternationalRectifiersadvancedHEXFETpowerMOSFETtechnology.Thelowonresistanceandlowgatechargeinherenttothistechnologymakethisdeviceidealforlowvoltageorbatterydrivenpowerconversionapplications. TheSO-

IRF

International Rectifier

SI4410DYPBF

N-ChannelMOSFET

Description ThisN-channelHEXFET®PowerMOSFETisproducedusingInternationalRectifiersadvancedHEXFETpowerMOSFETtechnology.Thelowonresistanceandlowgatechargeinherenttothistechnologymakethisdeviceidealforlowvoltageorbatterydrivenpowerconversionapplications. TheSO-

IRF

International Rectifier

产品属性

  • 产品编号:

    MSD4410C

  • 制造商:

    onsemi

  • 类别:

    光电器件 > 显示器模块 - LED 字符与数字

  • 包装:

    散装

  • 字符数:

    2

  • 大小 / 尺寸:

    0.630" 高 x 0.795" 宽 x 0.276" 直径(16.00mm x 20.20mm x 7.00mm)

  • 数字/字母大小:

    0.40"(10.16mm)

  • 显示类型:

    7 段

  • 通用引脚:

    共阳极

  • 颜色:

    绿色

  • 电压 - 正向 (Vf)(典型值):

    2.1V

  • 电流 - 测试:

    20mA

  • 毫烛光等级:

    2.2mcd

  • 波长 - 峰值:

    570nm

  • 功率耗散(最大值):

    70mW

  • 封装/外壳:

    16-DIP(0.500",12.70mm)

  • 描述:

    DISPLAY 7SEG 0.4\

供应商型号品牌批号封装库存备注价格
Fairchild
24+
DIP
15000
询价
FAIRCHILD
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
Fairchild
23+
16-DIP
33500
原装正品现货库存QQ:2987726803
询价
QTOPTOELECT
24+
原封装
966
原装现货假一罚十
询价
MSTAR
16+
BGA
2500
进口原装现货/价格优势!
询价
MSTAR
2016+
BGA
2500
只做原装,假一罚十,公司可开17%增值税发票!
询价
MSTARA
24+
BGA
5000
只做原装公司现货
询价
MSTARA
23+
BGA
8650
受权代理!全新原装现货特价热卖!
询价
MSTARA
24+
BGA
80000
只做自己库存,全新原装进口正品假一赔百,可开13%增
询价
MSTAR
24+
QFNBGA
10000
MSTAR原厂支持只做自己现货优势
询价
更多MSD4410C供应商 更新时间2025-7-13 15:30:00