MSC4963W

-20V(D-S) Dual P-Channel Enhancement Mode Power MOS FET

N4963A

N4963AClockSynthesizer13.5GHz

NCE4963

NCEP-ChannelEnhancementModePowerMOSFET

NCE4963

DualP-Channel20V(D-S)MOSFET

NCE4963

DualP-channelEnhancementModePowerMOSFET

Features VDS=-20V,ID=-13A RDS(ON)

NTD4963N

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=44A@TC=25℃ ·DrainSourceVoltage-VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=9.6mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

NTD4963N

PowerMOSFET30V,44A,SingleN?묬hannel,DPAK/IPAK

NTE4963

SurgeClamping,TransientOvervoltageSuppressorBidirectional

Description: TheNTE4900seriesofsiliconTransientSuppressorsdesignedtoprotectvoltagesensitivecomponentsfromhighenergyvoltagetransients.Transientovervoltagesuppressordeviceshavebecomeveryimportantasaconsequenceoftheirhighsurgecapability,extremelyfastresponsetime

PE4963

CFemaleConnectorClamp-SolderAttachmentForRG14,RG217

SAA4963

IntegratedNTSCcombfilter

GENERALDESCRIPTION TheSAA4963isanalignment-freeonechipcombfiltercompatiblewithNTSCMsystems. FEATURES •OnechipNTSCcombfilter •Timediscretebutcontinuousamplitudesignalprocessingwithanaloginterfaces •Internaldelaylines,filters,clockprocessingandsignalswitche