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MSC060SMA070S数据手册Microchip中文资料规格书
MSC060SMA070S规格书详情
描述 Description
Silicon carbide (SiC) power MOSFET product line from Microsemi increases your performance over silicon MOSFET and silicon IGBT solutions while lowering your total cost of ownership for high-voltage applications.Silicon Carbide N-Channel Power MOSFET, 700V, 60 mΩ ROHS
技术参数
- 制造商编号
：MSC060SMA070S
- 生产厂家
：Microchip
- package_carrier
：Tube
- package_name
：D3PAK
- Reverse Breakdown Voltage (min)
：0
- Reverse Breakdown Voltage (typ)
：0
- Reverse Breakdown Voltage (max)
：700
- On-State Resistance (milliohms) (min)
：0
- On-State Resistance (milliohms) (typ)
：60
- On-State Resistance (milliohms) (max)
：75
- Drain Current (dc) (min)
：0
- Drain Current (dc) (typ)
：0
- Drain Current (dc) (max)
：26
- Junction Temperature (℃) (min)
：-55
- Junction Temperature (℃) (typ)
：0
- Junction Temperature (℃) (max)
：175
